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公开(公告)号：US12142535B2
公开(公告)日：2024-11-12
申请号：US15445465
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
Abstract: A method of determining overlay of a patterning process, the method including: illuminating a substrate with a radiation beam such that a beam spot on the substrate is filled with one or more physical instances of a unit cell, the unit cell having geometric symmetry at a nominal value of overlay; detecting primarily zeroth order radiation redirected by the one or more physical instances of the unit cell using a detector; and determining, by a hardware computer system, a non-nominal value of overlay of the unit cell from values of an optical characteristic of the detected radiation.
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公开(公告)号：US20230042759A1
公开(公告)日：2023-02-09
申请号：US17968352
申请日：2022-10-18
Applicant: ASML NETHERLANDS B.V.
Inventor： Wim Tjibbo Tel , Frank Staals , Mark John Maslow , Roy Anunciado , Marinus Jochemsen , Hugo Augustinus Joseph Cramer , Thomas Theeuwes , Paul Christiaan Hinnen
IPC: G03F7/20
Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.
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3.发明授权公开(公告)号：US10983445B2
公开(公告)日：2021-04-20
申请号：US16268564
申请日：2019-02-06
Applicant: ASML NETHERLANDS B.V.
Inventor： Nitesh Pandey , Zili Zhou , Gerbrand Van Der Zouw , Arie Jeffrey Den Boef , Markus Gerardus Martinus Maria Van Kraaij , Armand Eugene Albert Koolen , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen , Martinus Hubertus Maria Van Weert , Anagnostis Tsiatmas , Shu-jin Wang , Bastiaan Onne Fagginger Auer , Alok Verma
Abstract: An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.
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公开(公告)号：US10481503B2
公开(公告)日：2019-11-19
申请号：US15237246
申请日：2016-08-15
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Youping Zhang , Hendrik Jan Hidde Smilde , Anagnostis Tsiatmas , Adriaan Johan Van Leest , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
Abstract: A substrate has first and second target structures formed by a lithographic process. Each target structure has a two-dimensional periodic structure formed in a single layer using first and second lithographic steps. The first target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a first bias amount. The second target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a second bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained. A measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
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公开(公告)号：US20190171115A1
公开(公告)日：2019-06-06
申请号：US16194769
申请日：2018-11-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Joannes Jitse VENSELAAR , Anagnostis Tsiatmas , Samee Ur Rehman , Paul Christiaan Hinnen , Jean-Pierre Agnes Henricus Marie Vaessen , Nicolas Mauricio Weiss , Gonzalo Roberto Sanguinetti , Thomai Zacharopoulou , Martijn Maria Zaal
Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
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Patent Agency Ranking
公开(公告)号：US10001710B2
公开(公告)日：2018-06-19
申请号：US15214067
申请日：2016-07-19
Applicant: ASML Netherlands B.V.
Inventor： Frank Staals , Carlo Cornelis Maria Luijten , Paul Christiaan Hinnen , Anton Bernhard Van Oosten
CPC classification number: G03F7/70633 , G01B11/02 , G01B11/272 , G01B2210/56 , G03F7/70625 , G03F7/70641
Abstract: Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.
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公开(公告)号：US20170255737A1
公开(公告)日：2017-09-07
申请号：US15445522
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
IPC: G06F17/50 , H01L21/308 , H01L21/66
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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8.发明申请Method And Apparatus for Measuring a Parameter of a Lithographic Process, Substrate and Patterning Devices for use in the Method 审中-公开用于测量方法中使用的平版印刷工艺，基板和图案化装置的参数的方法和装置公开(公告)号：US20170059999A1
公开(公告)日：2017-03-02
申请号：US15237246
申请日：2016-08-15
Applicant: ASML Netherlands B.V.
Inventor： Maurits VAN DER SCHAAR , Youping Zhang , Hendrik Jan Hidde Smilde , Anagnostis Tsiatmas , Adriaan Johan Van Leest , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
Abstract translation: 基板通过光刻工艺在其上形成第一和第二目标结构。 每个目标结构具有使用第一和第二光刻步骤在衬底上的单个材料层中形成的二维周期性结构，其中在第一目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻 以接近第一光刻步骤中形成的特征的空间周期的一半的第一偏压量步进，并且在第二目标结构中，在第二光刻步骤中限定的特征相对于第一光刻步骤中限定的特征移位 光刻步骤接近接近所述空间周期的一半的第二偏置量并且不同于第一偏置量。 获得第一目标结构的角度分辨散射光谱和第二目标结构的角度分辨散射光谱，并且从使用在第二目标结构的散射光谱中发现的不对称性的测量值导出光刻处理的参数的测量 第一和第二目标结构。
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公开(公告)号：US11728224B2
公开(公告)日：2023-08-15
申请号：US17371380
申请日：2021-07-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
CPC classification number: H01L22/12 , G01N21/9501 , G03F7/70633 , G03F7/70683 , G03F9/7003
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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公开(公告)号：US20220066330A1
公开(公告)日：2022-03-03
申请号：US17497087
申请日：2021-10-08
Applicant: ASML NETHERLANDS B.V.
Inventor： Anagnostis TSIATMAS , Paul Christiaan Hinnen , Elliott Gerard Mc Namara , Thomas Theeuwes , Maria Isabel De La Fuente Valentin , Mir Homayoun Shahrjerdy , Arie Jeffrey Den Boef , Shu-jin Wang
Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
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