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公开(公告)号：US11604419B2
公开(公告)日：2023-03-14
申请号：US17241142
申请日：2021-04-27
Applicant: ASML NETHERLANDS B.V.
Inventor： Joannes Jitse Venselaar , Anagnostis Tsiatmas , Samee Ur Rehman , Paul Christiaan Hinnen , Jean-Pierre Agnes Henricus Marie Vaessen , Nicolas Mauricio Weiss , Gonzalo Roberto Sanguinetti , Thomai Zacharopoulou , Martijn Maria Zaal
Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
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公开(公告)号：US11145557B2
公开(公告)日：2021-10-12
申请号：US16790809
申请日：2020-02-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
IPC: G06F30/392 , H01L21/66 , G03F7/20 , G03F9/00 , G01N21/95
Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.
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公开(公告)号：US11101185B2
公开(公告)日：2021-08-24
申请号：US16720393
申请日：2019-12-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
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公开(公告)号：US10782617B2
公开(公告)日：2020-09-22
申请号：US16051697
申请日：2018-08-01
Applicant: ASML NETHERLANDS B.V.
Inventor： Anagnostis Tsiatmas , Elliott Gerard McNamara
IPC: G03F7/20
Abstract: A method, including: measuring a first plurality of instances of a metrology target on a substrate processed using a patterning process to determine values of at least one parameter of the patterning process using a first metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target; and measuring a second different plurality of instances of the metrology target on the same substrate to determine values of the at least one parameter of the patterning process using a second metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target, wherein the second metrology recipe differs from the first metrology recipe in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.
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公开(公告)号：US10747122B2
公开(公告)日：2020-08-18
申请号：US16347944
申请日：2017-10-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Anagnostis Tsiatmas , Alok Verma , Bert Verstraeten
Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method includes measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target has a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation includes at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.
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Patent Agency Ranking
公开(公告)号：US11947269B2
公开(公告)日：2024-04-02
申请号：US17497087
申请日：2021-10-08
Applicant: ASML NETHERLANDS B.V.
Inventor： Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Thomas Theeuwes , Maria Isabel De La Fuente Valentin , Mir Homayoun Shahrjerdy , Arie Jeffrey Den Boef , Shu-jin Wang
CPC classification number: G03F7/70633 , G03F7/70625 , G03F7/70683 , G06T7/0006 , G03F7/20 , G06T2207/30148
Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
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公开(公告)号：US11710668B2
公开(公告)日：2023-07-25
申请号：US17072391
申请日：2020-10-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Maria Isabel De La Fuente Valentin , Koen Van Witteveen , Martijn Maria Zaal , Shu-jin Wang
CPC classification number: H01L22/12 , G01N21/9501 , G03F7/70633 , G03F7/70683 , G03F9/7003
Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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公开(公告)号：US11143972B2
公开(公告)日：2021-10-12
申请号：US16178638
申请日：2018-11-02
Applicant: ASML NETHERLANDS B.V.
Inventor： Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Thomas Theeuwes , Maria Isabel De La Fuente Valentin , Mir Homayoun Shahrjerdy , Arie Jeffrey Den Boef , Shu-jin Wang
Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
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公开(公告)号：US11092900B2
公开(公告)日：2021-08-17
申请号：US16675674
申请日：2019-11-06
Applicant: ASML Netherlands B.V.
Inventor： Maurits Van Der Schaar , Youping Zhang , Hendrik Jan Hidde Smilde , Anagnostis Tsiatmas , Adriaan Johan Van Leest , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Paul Christiaan Hinnen
Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
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公开(公告)号：US11022897B2
公开(公告)日：2021-06-01
申请号：US16194769
申请日：2018-11-19
Applicant: ASML NETHERLANDS B.V.
Inventor： Joannes Jitse Venselaar , Anagnostis Tsiatmas , Samee Ur Rehman , Paul Christiaan Hinnen , Jean-Pierre Agnes Henricus Marie Vaessen , Nicolas Mauricio Weiss , Gonzalo Roberto Sanguinetti , Thomai Zacharopoulou , Martijn Maria Zaal
Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
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