公开(公告)号：US20200097633A1

公开(公告)日：2020-03-26

申请号：US16541420

申请日：2019-08-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Sunit Sondhi MAHAJAN ,  Abraham SLACHTER ,  Brennan PETERSON ,  Koen Wilhelmus Cornelis Adrianus VAN DER STRATEN ,  Antonio CORRADI ,  Pieter Joseph Marie WÖLTGENS

IPC: G06F17/50 ,  G03F7/20

Abstract: A method for controlling a processing apparatus used in a semiconductor manufacturing process to form a structure on a substrate, the method including: obtaining a relationship between a geometric parameter of the structure and a performance characteristic of a device including the structure; and determining a process setting for the processing apparatus associated with a location on the substrate, wherein the process setting is at least partially based on an expected value of the geometric parameter of the structure when using the processing setting, a desired performance characteristic of the device and an expected physical yield margin or defect yield margin associated with the location on the substrate.