公开(公告)号：SG11202112814VA

公开(公告)日：2021-12-30

申请号：SG11202112814V

申请日：2020-05-20

Applicant: BASF SE

Inventor： HOOGBOOM JOANNES THEODORUS VALENTINUS ,  KLIPP ANDREAS ,  KE JHIH JHENG ,  WANG CHE WEI ,  TING CHIA CHING

IPC: H01L21/02 ,  C11D3/00 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00

Abstract: The use of a cleaning composition in combination with one or more oxidants is described for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask comprising or consisting of a material selected from the group consisting of TiN, Ta, TaN, Al and HfOx and/or a layer or mask comprising or consisting of a material selected from the group consisting of tungsten carbide (WCx) and tungsten nitride (WNx), and/or for removing from the surface of a semiconductor substrate a layer comprising an aluminium compound. Further is described said cleaning composition and a use of said cleaning composition for removing post-etch or post-ash residue from the surface of a semiconductor substrate. Under a further aspect, it is described a wet-etch composition comprising said cleaning composition and one or more oxidants as well as the use of said wet-etch composition. A process for the manufacture of a semiconductor device from a semiconductor substrate and a kit comprising said cleaning composition and one or more oxidants are also described.