公开(公告)号：KR20200139192A

公开(公告)日：2020-12-11

申请号：KR20207030926

申请日：2019-04-02

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  BITTNER CHRISTIAN ,  BRAUN SIMON ,  OETTER GUENTER ,  BURK YENI

IPC: H01L21/02 ,  C11D1/02 ,  C11D1/62 ,  C11D1/88

Abstract: 반도체기판의적어도하나의표면의개질및/또는처리에서절단가능한첨가제로서, 바람직하게는절단가능한계면활성제로서의유기화합물의사용이기재되어있다. 더욱이, 반도체기판을제조하는방법이설명되어있는데, 이는적어도하나의표면을유기화합물과, 또는이를포함하는조성물과접촉시켜상기표면을처리또는개질하는단계, 상기유기화합물을단편들의세트로절단하는단계및 상기단편들의세트를접촉표면에서제거하는단계를포함한다. 보다구체적으로, 반도체기판또는중간반도체기판을세정또는린싱하는방법이기재되어있다. 또한, 위에서지적한용도및 방법에적합하고바람직하게는절단가능한계면활성제인화합물이기재되어있다.

公开(公告)号：KR20200141064A

公开(公告)日：2020-12-17

申请号：KR20207031809

申请日：2019-03-25

Applicant: BASF SE

Inventor： HOOGBOOM JOANNES THEODORUS VALENTINUS ,  KLIPP ANDREAS ,  KE JHIH JHENG ,  CHENG YI PING

IPC: G03F7/42 ,  C11D7/26 ,  C11D7/32 ,  C11D7/34 ,  C11D11/00

Abstract: 본원에는반도체기판의표면으로부터에칭후 또는에싱후 잔류물을제거하기위한세정조성물및 상기세정조성물의상응하는용도가기재된다. 또한예를들어, 반도체기판의표면상의바람직하게는텅스텐재료의존재하에 TiN 을포함하는또는이것으로이루어진층 또는마스크의산화에칭또는부분산화에칭을위한및/또는반도체기판의표면으로부터에칭후 또는에싱후 잔류물을제거하기위한, 하나이상의산화제와조합된상기세정조성물의용도가기재된다. 더욱이, 본발명의세정조성물및 하나이상의산화제를포함하는습식에칭조성물, 반도체기판의표면상의바람직하게는텅스텐재료의존재하에 TiN 을포함하는또는이것으로이루어진층 또는마스크의산화에칭또는부분산화에칭을위한및/또는반도체기판의표면으로부터에칭후 또는에싱후 잔류물을제거하기위한상기습식에칭조성물의용도, 상기습식에칭조성물을사용하는반도체기판으로부터의반도체소자의제조방법및 본발명의세정조성물및 하나이상의산화제를포함하는키트가기재된다. 또한, 반도체기판의표면상의층 또는마스크의에칭또는부분에칭및/또는반도체기판의세정을위한조성물에서의이미다졸리딘티온의용도가기재된다.

公开(公告)号：WO2011012559A3

公开(公告)日：2011-03-24

申请号：PCT/EP2010060762

申请日：2010-07-26

Applicant: BASF SE ,  CHEN CHIENSHIN ,  SHEN MEICHIN ,  CHAN CHIAHAO ,  KLIPP ANDREAS

Inventor： CHEN CHIENSHIN ,  SHEN MEICHIN ,  CHAN CHIAHAO ,  KLIPP ANDREAS

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/31133 ,  C11D11/0047 ,  G03F7/425

Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (2O). The present invention also provides a process for post-ion implantation stripping by using the composition of the present invention.

Abstract translation: 本发明涉及基本上无水的光致抗蚀剂剥离组合物。 特别地，本发明涉及用于在离子注入工艺之后去除光致抗蚀剂的基本上无水的光致抗蚀剂剥离组合物，其包括：（a）胺，（b）有机溶剂A和（c）共溶剂 ，其中所述组合物基本上是无水的（20）。 本发明还提供了通过使用本发明的组合物进行离子后植入剥离的方法。

公开(公告)号：WO2015004567A3

公开(公告)日：2015-05-14

申请号：PCT/IB2014062747

申请日：2014-07-01

Applicant: BASF SE ,  BASF CHINA CO LTD

Inventor： REICHARDT ROBERT ,  KALLER MARTIN ,  LAUTER MICHAEL ,  LI YUZHUO ,  KLIPP ANDREAS

IPC: C09G1/02 ,  C09G1/00 ,  C09G1/04 ,  H01L21/02 ,  H01L21/321

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/3212

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

Abstract translation: 提供化学机械抛光（CMP）组合物，其包含（A）一种或多种选自作为防腐剂的苯并三唑衍生物的化合物和（B）无机颗粒，有机颗粒或其复合物或混合物。 本发明还涉及使用选自苯并三唑衍生物的某些化合物作为缓蚀剂，特别是用于提高化学机械抛光（CMP）组合物从用于制造钽酸铅的基材中除去钽或氮化钽的选择性 在所述衬底上存在铜的半导体器件。

公开(公告)号：WO2012011020A3

公开(公告)日：2012-03-15

申请号：PCT/IB2011053099

申请日：2011-07-12

Applicant: BASF SE ,  BASF CHINA CO LTD ,  MELLIES RAIMUND ,  KLIPP ANDREAS

Inventor： MELLIES RAIMUND ,  KLIPP ANDREAS

IPC: C11D3/34 ,  C11D7/32 ,  C11D7/34 ,  H01L21/02

CPC classification number: C11D3/349 ,  C11D1/345 ,  C11D1/66 ,  C11D1/667 ,  C11D1/72 ,  C11D3/0073 ,  C11D3/06 ,  C11D3/2068 ,  C11D3/2086 ,  C11D3/30 ,  C11D3/3757 ,  C11D3/378 ,  C11D11/0017 ,  C11D11/0041 ,  C11D11/0047 ,  C11D11/0064 ,  H01L21/02074 ,  H05K3/1208 ,  H05K2203/0793

Abstract: Aqueous alkaline cleaning composition free from organic solvents and metal ion-free silicates, the said compositions comprising (A) a thioamino acid having at least one primary amino group and at least one mercapto group, (B) a quaternary ammonium hydroxide, (C) a chelating and/or corrosion inhibiting agent selected from the group consisting of aliphatic and cycloaliphatic amines having at least two primary amino groups, and aliphatic and cycloaliphatic amines having at least one hydroxy group, (D) a nonionic surfactant selected from the group of acetylenic alcohols, alkyloxylated acetylenic alcohols and alkyloxylated sorbitan monocarboxylic acid mono esters; the use of the alkaline cleaning composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline cleaning composition.

Abstract translation: 所述组合物包含（A）具有至少一个伯氨基和至少一个巯基的硫代氨基酸，（B）季铵氢氧化物，（C） 选自具有至少两个伯氨基的脂族和脂环族胺和具有至少一个羟基的脂族和脂环族胺的螯合和/或腐蚀抑制剂，（D）选自炔属的非离子表面活性剂 醇，烷氧基乙炔醇和烷氧基化脱水山梨糖醇单羧酸单酯; 使用碱性清洁组合物来处理用于制造电气和光学装置的基板; 以及用于处理用于制造使用所述含水碱性清洁组合物的电气和光学装置的基板的方法。

公开(公告)号：WO2009150021A2

公开(公告)日：2009-12-17

申请号：PCT/EP2009056160

申请日：2009-05-20

Applicant: BASF SE ,  KLIPP ANDREAS ,  WAGNER NORBERT ,  ZAGAR CYRILL ,  FECHTENKOETTER ANDREAS ,  PENG CHIH-CHENG ,  SHIH CHIEN HSUEH STEVE ,  SUJANDI SUJANDI

Inventor： KLIPP ANDREAS ,  WAGNER NORBERT ,  ZAGAR CYRILL ,  FECHTENKOETTER ANDREAS ,  PENG CHIH-CHENG ,  SHIH CHIEN HSUEH STEVE ,  SUJANDI SUJANDI

IPC: C08G77/06 ,  C08J9/00 ,  C08J9/232

CPC classification number: C08G77/06 ,  B01D53/228 ,  B01D71/70 ,  C08J9/28 ,  C08J2383/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/3121

Abstract: The present invention concerns a method of making a porous material comprising the following steps in the order a-b-c-d: (a) reacting at least one organosilane (A) with water in the presence of a solvent (C) to form a polymeric material, (b) subjecting said polymeric material to a first heat treatment, (c) bringing said polymeric material into contact with at least one dehydroxylation agent (D), (d) subjecting said polymeric material to electromagnetic radiation and/or to a further heat treatment. The present invention furthermore concerns the porous material obtainable by the inventive method, semiconductor devices and electronic components comprising said porous material, and the use of said material for electrical insulation and in microelectronic devices, membranes, displays and sensors.

Abstract translation: 本发明涉及制备多孔材料的方法，其顺序包括以下步骤：（a）在溶剂（C）存在下使至少一种有机硅烷（A）与水反应形成聚合物材料，（b ）使所述聚合材料经受第一热处理，（c）使所述聚合材料与至少一种脱羟基化剂（D）接触，（d）使所述聚合材料经受电磁辐射和/或进一步热处理。 本发明还涉及通过本发明方法可获得的多孔材料，包括所述多孔材料的半导体器件和电子部件以及所述用于电绝缘的材料以及在微电子器件，膜，显示器和传感器中的用途。

公开(公告)号：WO2014013396A2

公开(公告)日：2014-01-23

申请号：PCT/IB2013055728

申请日：2013-07-12

Applicant: BASF SE ,  BASF SCHWEIZ AG ,  BASF CHINA CO LTD

Inventor： KLIPP ANDREAS ,  HONCIUC ANDREI ,  MONTERO PANCERA SABRINA ,  BAAN ZOLTAN

CPC classification number: G03F7/32 ,  G03F7/2002 ,  G03F7/2041 ,  G03F7/322

Abstract: Aqueous composition for developing photoresists applied to semiconductor substrates, said aqueous composition comprising a quaternary ammonium compound of formula I wherein (a) R1 is selected from a C4 to C30 organic radical of formula -X-CR10 R11 R12, wherein R10, R11 and R12 are independently selected from a C1 to C20 alkyl and two or three of R10, R11 and R12 may together form a ring system, and R2, R3 and R4 are selected from R1 or a C1 to C10 alkyl, C1 to C10 hydroxyalkyl C1 to 1C30 aminoalkyl or C1 to C20A alkoxyalkyl, and X is a chemical bond or a C1 to C4 divalent organic radical, or (b) R and R2 areindependently selected from an organic radical of formula IIa or IIb (IIa) 20 or wherein Y is C4 to C20 alkanediyl, Y 2 is a one-, two-or tricyclic C to C20 carbocyclic or heterocyclic aromatic system, and R3 and R4 are selected from R or a C to C 10 alkyl, C to C 10 hydroxyalkyl, C to C 30 aminoalkyl, or C to C 20 alkoxyalkyl, and X is a chemical bond or a C to C 4 divalent organic radical, and Xis a chemical bond or a C to C 4 divalent organic radical, or30 (c)at least two of R, R 2, R 3, and R 4 together form a saturated mono, bi or tricyclic C to C 30 organic ring system and the remaining R 3 and R 4, if any, together form a monocyclic C to C 30 organic ring system or are selected from a C to C 10 alkyl, C to C 10 hydroxyalkyl, C to C 30 aminoalkyl, or C to C20 alkoxyalkyl, and Xis a chemical bond or a C1 to C4 divalent organic radical, or 3 (d)a combination thereof, and wherein Z is a counter-ion and z is an integer, which is chosen so that the overall bulky quaternary ammonium compound is electrically uncharged.

Abstract translation: 用于开发应用于半导体衬底的光致抗蚀剂的水性组合物，所述水性组合物包含式I的季铵化合物，其中（a）R 1选自式-X-CR 10 R 11 R 12的C 4至C 30有机基团，其中R 10，R 11和R 12 独立地选自C1至C20烷基，R10，R11和R12中的两个或三个可以一起形成环系，R2，R3和R4选自R1或C1至C10烷基，C1至C10羟烷基C1至1C30 氨基烷基或C1至C20A烷氧基烷基，X为化学键或C1至C4二价有机基团，或（b）R和R 2独立地选自式IIa或IIb（IIa）20的有机基团或其中Y为C4至 C20链烷二基，Y 2是一，二或三环C至C20碳环或杂环芳族体系，R3和R4选自R或C至C10烷基，C至C10羟基烷基，C至C30氨基烷基 或C至C 20烷氧基烷基，X为化学键或C至C 4二价有机物 自由基，X是化学键或C至C 4二价有机基团，或30（c）R，R 2，R 3和R 4中的至少两个一起形成饱和的单，双或三环C至C 30有机基团 环系统，剩余的R 3和R 4（如果有的话）一起形成单环C至C 30有机环系，或选自C 1至C 10烷基，C 1至C 10羟基烷基，C至C 30氨基烷基或C 至20个烷氧基烷基，X为化学键或C1至C4二价有机基团，或3（d）其组合，并且其中Z为抗衡离子，z为整数，其选择为使得整体大体积季 铵化合物是电不带电的。

公开(公告)号：WO2010084033A3

公开(公告)日：2012-01-26

申请号：PCT/EP2010050078

申请日：2010-01-06

Applicant: BASF SE ,  KLIPP ANDREAS ,  HUNG TING HSU ,  SU KUOCHEN ,  TU SHENG-HUNG

Inventor： KLIPP ANDREAS ,  HUNG TING HSU ,  SU KUOCHEN ,  TU SHENG-HUNG

IPC: G03F7/42 ,  C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02

CPC classification number: C11D7/3209 ,  C11D7/04 ,  C11D7/263 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/5004 ,  C11D7/5022 ,  C11D11/0047 ,  H01L21/02074

Abstract: The present invention relates to a composition for post chemical-mechanical polishing (CMP) cleaning. The composition is alkaline, which can remove azole-type corrosion inhibitors on the wafer surface after CMP. This composition can effectively remove azole compounds, increase wettability of the Cu surface, and significantly improve the defect removal after CMP.

Abstract translation: 本发明涉及用于后化学机械抛光（CMP）清洗的组合物。 该组合物是碱性的，其可以在CMP之后去除晶片表面上的唑类腐蚀抑制剂。 该组合物可有效去除唑化合物，增加Cu表面的润湿性，并显着改善CMP后的缺陷去除。

公开(公告)号：EP2825913A4

公开(公告)日：2016-02-17

申请号：EP13761807

申请日：2013-03-18

Applicant: BASF SE

Inventor： BITTNER CHRISTIAN ,  KLIPP ANDREAS ,  BRAUN SIMON

IPC: G03F7/42 ,  C11D7/50 ,  C11D11/00 ,  H01L21/311

CPC classification number: G03F7/426 ,  C11D7/5004 ,  C11D7/5009 ,  C11D7/5013 ,  C11D7/5022 ,  C11D11/0047 ,  G03F7/425 ,  H01L21/02057 ,  H01L21/0271 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/31133 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66477

Abstract: A photoresist stripping and cleaning composition free from N-alkylpyrrolidones and added quaternary ammonium hydroxides comprising a component (A) which comprises the polar organic solvents N-methylimidazole, dimethylsulfoxide and 1-aminopropane-2-ol.

公开(公告)号：EP2668248A4

公开(公告)日：2017-09-13

申请号：EP12739044

申请日：2012-01-17

Applicant: BASF SE

Inventor： KLIPP ANDREAS ,  MAYER DIETER

IPC: C09K13/08 ,  C11D11/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

CPC classification number: H01L21/0337 ,  C11D11/0047 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/405

Abstract: The use of surfactants A, the 1% by weight aqueous solutions of which exhibit a static surface tension 3; and a photolithographic process making use of the surfactants A in immersion photoresist layers, photoresist layers exposed to actinic radiation, developer solutions for the exposed photoresist layers and/or in chemical rinse solutions for developed patterned photoresists comprising patterns having line-space dimensions below 50 nm and aspect ratios >3. By way of the surfactants A, pattern collapse is prevented, line edge roughness is reduced, watermark defects are prevented and removed and defects are reduced by removing particles.

Abstract translation: 使用表面活性剂A，其1重量％水溶液表现出<25mN / m的静态表面张力，所述表面活性剂A含有至少三个选自三氟甲基，五氟乙基，三氟甲基， 1-七氟丙基，2-七氟丙基，七氟异丙基和五氟硫烷基; 用于制造包括具有低于50nm的线间距尺寸和高宽比> 3的图案的集成电路; 以及使用浸渍光致抗蚀剂层中的表面活性剂A，暴露于光化辐射的光致抗蚀剂层，用于曝光的光致抗蚀剂层的显影剂溶液和/或用于显影的图案化光致抗蚀剂的化学冲洗溶液中的光刻工艺，其包括线空间尺寸低于50nm 和纵横比> 3。 通过表面活性剂A，防止图案坍塌，减小线边缘粗糙度，防止和去除水印缺陷，并通过去除颗粒来减少缺陷。