Abstract:
An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.
Abstract:
A SOI device may include a waveguide adapter that couples light between an external light source - e.g., a fiber optic cable or laser - and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high- temperatures may be used without harming other components in the SOI device - e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer. In general, a method is disclosed of forming a first waveguide in an insulation layer and a second waveguide in a crystalline semiconductor layer disposed on the first waveguide, wherein the second waveguide at least partially overlaps the first waveguide. An optical waveguide adapater is disclosed, wherein the adapter comprises a first prong and a plurality of second prongs, whereby a dimensions of the second prongs reduces as the second prongs extend in a direction away from a coupling surface of the waveguide adapater, and a dimension of the first prong increases as the first prong extends away from the coupling surface, and a length of the first prong in the direction extending away from the coupling surface is greater than each of the respective lengths of the second prongs.
Abstract:
Embodiments of the present disclosure include devices that split a light beam into two separate paths, with reduced sensitivity to fabrication variation. The devices can operate as 3-dB splitters that divide the input optical energy equally between two output waveguides. Similarly, the devices can also function to combine two light beams into a single path (coupler). The designs make use of adiabatic modal evolution and do not require physical symmetry along the entire device length. The devices inlcude first and second waveguides, each having a transition section, which may be tapered, the transition disposed adjacent to each other defining a gap therebetween, such that optical energy couples between the waveguides.
Abstract:
An optical interconnection arrangement for use in high data applications is presented that eliminates the need for extensive serialization/de-serialization (SERDES) functionality by utilizing pulse amplitude modulation (PAM) techniques to represent the data in the optical domain while utilizing a separate channel for transmitting an optical clock signal, eliminating the need for clock recovery circuitry on the receive end of the arrangement.
Abstract:
A SOI device may include a waveguide adapter that couples light between an external light source - e.g., a fiber optic cable or laser - and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device - e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.
Abstract:
A high speed silicon-based optical modulator with control of the dopant profiles in the body and gate regions of the device reduces the series resistance of the structure without incurring substantial optical power loss. That is, the use of increased dopant values in areas beyond the active region will allow for the series resistance to be reduced (and thus increase the modulating speed of the device) without incurring too large a penalty in signal loss. The dopant profiles within the gate and body regions are tailored to exhibit an intermediate value between the high dopant concentration in the contact areas and the low dopant concentration in the carrier integration window area.
Abstract:
Embodiments of the present disclosure include devices that split a light beam into two separate paths, with reduced sensitivity to fabrication variation. The devices can operate as 3-dB splitters that divide the input optical energy equally between two output waveguides. Similarly, the devices can also function to combine two light beams into a single path (coupler). The designs make use of adiabatic modal evolution and do not require physical symmetry along the entire device length.
Abstract:
A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.