Abstract:
An optical modulator may include a leftmost waveguide, a rightmost waveguide, and a dielectric layer disposed therebetween. In one embodiment, the waveguides may be disposed on the same plane. When a voltage potential is created between the rightmost and leftmost waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) structure that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. As opposed to a horizontal SISCAP structure where the dielectric layer is disposed between upper and lower waveguides, arranging the dielectric layer between waveguides disposed on the same plane results in a vertical SISCAP structure. In one embodiment, the leftmost and rightmost waveguide are both made from crystalline silicon.
Abstract:
Embodiments described herein describe a sub-mount that is etched to include respective cavities with at least two adjacent sides that align optical filters and a mirror. Moreover, the cavities are arranged on the sub-mount such that when the filters and mirror are disposed in the cavities, they align in a manner that enables the performance of a multiplexing or demultiplexing function as part of, for example, a zigzag multiplexer/demultiplexer. In one embodiment, the filters and mirrors are aligned passively rather than actively. The sub-mount may then be placed on a substrate that includes other components of a ROSA or TOSA. In one embodiment, the substrate is also etched to include a cavity two adjacent sides to align the sub-mount so that sub-mount is passively aligned once disposed into the cavity.
Abstract:
An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. In one embodiment, the lower waveguide may include a u-shaped region within an optical mode of the light passing through the optical modulator. By conforming the dielectric layer to the surfaces of the u-shaped region, the amount of area of the dielectric layer within a charge modulation region is increased relative to forming the dielectric layer on a single plane. Folding the dielectric layer in this manner may improve modulation efficiency. In one embodiment, the u-shaped region is formed by using ridge structures that extend from an upper surface of the lower waveguide towards the upper waveguide. To aid in lateral confinement of the optical mode, the dielectric layer may be deposited on one side surface of the ridge structures while a different dielectric material is deposited on the opposite side surface.
Abstract:
An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.
Abstract:
Presented herein is a tray for shipping, handling, and/or processing optomechanical components. The tray (100) has a plurality of pockets (101) arranged in an array, wherein each pocket is configured to hold one optomechanical component (122), and wherein each pocket includes at least one fiducial hole (112), at least one vacuum hole (110), a first cradle element (114) configured to support a clip (126) that attaches to one or more optical fibers (124) of the optomechanical component, and a second cradle element (116) configured to support a head (128) of the optomechanical component. Also presented herein is a clip (126) for an optomechanical component (122) that includes a body having a top face (127) and a bottom face (129), and a plurality of gripping elements (132) arranged in pairs on the bottom face, each pair of gripping elements configured to support a barrel of an optical connector (130) attached to a corresponding optical fiber of the pair of optical fibers.
Abstract:
Embodiments described herein describe a sub-mount that is etched to include respective cavities with at least two adjacent sides that align optical filters and a mirror. Moreover, the cavities are arranged on the sub-mount such that when the filters and mirror are disposed in the cavities, they align in a manner that enables the performance of a multiplexing or demultiplexing function as part of, for example, a zigzag multiplexer/demultiplexer. In one embodiment, the filters and mirrors are aligned passively rather than actively. The sub-mount may then be placed on a substrate that includes other components of a ROSA or TOSA. In one embodiment, the substrate is also etched to include a cavity two adjacent sides to align the sub-mount so that sub-mount is passively aligned once disposed into the cavity.
Abstract:
An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.
Abstract:
A high speed silicon-based optical modulator with control of the dopant profiles in the body and gate regions of the device reduces the series resistance of the structure without incurring substantial optical power loss. That is, the use of increased dopant values in areas beyond the active region will allow for the series resistance to be reduced (and thus increase the modulating speed of the device) without incurring too large a penalty in signal loss. The dopant profiles within the gate and body regions are tailored to exhibit an intermediate value between the high dopant concentration in the contact areas and the low dopant concentration in the carrier integration window area.