公开(公告)号：US20160372635A1

公开(公告)日：2016-12-22

申请号：US15256263

申请日：2016-09-02

Applicant: EPISTAR CORPORATION

Inventor： Tsun-Kai KO ,  Schang-Jing HON ,  Chien-Kai CHUNG ,  Hui-Chun YEH ,  An-Ju LIN ,  Chien-Fu SHEN ,  Chen OU

IPC: H01L33/38 ,  H01L33/42 ,  H01L33/22 ,  H01L33/06 ,  H01L33/14

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system, wherein the contact layer comprises a discontinuous region exposing the top surface of the second conductivity layer, the discontinuous region is formed along the shape of the second electrical connector.

Abstract translation: 光电子半导体器件包括衬底; 包括第一导电层，第二导电层和第一导电层与第二导电层之间的转换单元的半导体系统，其中第一导电层比第二导电层更靠近基板，并且 所述第二导电层包括垂直于所述半导体系统的厚度方向的顶表面，并且在所述半导体系统的俯视图中，所述第一导电层的轮廓围绕所述第二导电层的轮廓; 在半导体系统的第一导电层上的第一电连接器; 第二电连接器，包括形成在半导体系统的第二导电层上的形状; 以及形成在所述第二导电层的顶表面上并且在所述半导体系统的顶视图中在所述第二导电层的轮廓的内侧具有外周的接触层，其中所述接触层包括暴露所述第二导电层的不连续区域 第二导电层的顶表面沿着第二电连接器的形状形成不连续区域。

公开(公告)号：US20180114880A1

公开(公告)日：2018-04-26

申请号：US15839160

申请日：2017-12-12

Applicant: EPISTAR CORPORATION

Inventor： Tsun-Kai KO ,  Schang-Jing HON ,  Chien-Kai CHUNG ,  Hui-Chun YEH ,  An-Ju LIN ,  Chien-Fu SHEN ,  Chen OU

IPC: H01L33/38 ,  H01L33/06 ,  H01L33/22 ,  H01L33/14

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.