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公开(公告)号：US20230005984A1
公开(公告)日：2023-01-05
申请号：US17901655
申请日：2022-09-01
Applicant: EPISTAR CORPORATION
Inventor： Po-Shun CHIU , Tsung-Hsun CHIANG , Liang-Sheng CHI , Jing JIANG , Jie CHEN , Tzung- Shiun YEH , Hsin-Ying WANG , Hui-Chun YEH , Chien-Fu SHEN
Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.
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公开(公告)号：US20220173272A1
公开(公告)日：2022-06-02
申请号：US17674690
申请日：2022-02-17
Applicant: EPISTAR CORPORATION
Inventor： Li-Ming CHANG , Tzung-Shiun YEH , Chien-Fu SHEN , Wen-Hsiang LIN , Pei-Chi CHIANG , Yi-Wen KU
Abstract: A light-emitting package, includes: a housing including an opening; a lead frame covered by the housing; a light-emitting device, mounted in the opening and electrically connected to the lead frame, the light-emitting device including: a substrate including: a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; a semiconductor stack on the main surface, the semiconductor stack including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area not covered by the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon; and a filling material filling in the opening and covering the light-emitting device.
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公开(公告)号：US20200295233A1
公开(公告)日：2020-09-17
申请号：US16891670
申请日：2020-06-03
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Bo-Jiun HU , Tsung-Hsun CHIANG , Wen-Hung CHUANG , Kuan-Yi LEE , Yu-Ling LIN , Chien-Fu SHEN , Tsun-Kai KO
Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first contact layer on the first semiconductor layer; a second contact layer on the second semiconductor layer, wherein the first contact layer and the second contact layer comprise a metal material other than gold (Au) or copper (Cu); a first pad on the semiconductor stack; a second pad on the semiconductor stack.
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公开(公告)号：US20180145228A1
公开(公告)日：2018-05-24
申请号：US15858534
申请日：2017-12-29
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Bo-Jiun HU , Tsung-Hsun CHIANG , Wen-Hung CHUANG , Kuan-Yi LEE , Yu-Ling LIN , Chien-Fu SHEN , Tsun-Kai KO
CPC classification number: H01L33/46 , H01L33/38 , H01L33/382 , H01L33/405
Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
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公开(公告)号：US20180076358A1
公开(公告)日：2018-03-15
申请号：US15820002
申请日：2017-11-21
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Chien-Chih LIAO , Tzu-Yao TSENG , Tsun-Kai KO , Chien-Fu SHEN
IPC: H01L33/38
CPC classification number: H01L33/38 , H01L33/405
Abstract: An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.
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Patent Agency Ranking
公开(公告)号：US20170047494A1
公开(公告)日：2017-02-16
申请号：US14825787
申请日：2015-08-13
Applicant: EPISTAR CORPORATION
Inventor： Hui-Chun YEH , Chien-Fu SHEN , Tsun-Kai KO
CPC classification number: H01L27/156 , H01L33/145 , H01L33/38
Abstract: A light-emitting device, including a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units include a first light-emitting unit; a second light-emitting unit; and a group of light-emitting units formed between the first light-emitting unit and the second light-emitting unit, wherein each of the plurality of light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a plurality of electrical connections formed on the plurality of light-emitting units, electrically connecting each two of the light-emitting units adjacent; a first pad formed on the first light-emitting unit; a second pad and a third pad formed on the second light-emitting unit; wherein one of the plurality of electrical connection connects and extends from the second pad.
Abstract translation: 1.一种发光装置，包括基板; 形成在所述基板上的多个发光单元，其中所述多个发光单元包括第一发光单元; 第二发光单元; 以及形成在所述第一发光单元和所述第二发光单元之间的一组发光单元，其中所述多个发光单元中的每一个包括第一类型半导体层，第二类型半导体层和 形成在第一型半导体层和第二类型半导体层之间的有源层; 形成在所述多个发光单元上的多个电连接，将每个所述发光单元相邻地电连接; 形成在第一发光单元上的第一焊盘; 第二焊盘和第三焊盘，形成在所述第二发光单元上; 其中所述多个电连接中的一个连接并从所述第二焊盘延伸。
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公开(公告)号：US20160197237A1
公开(公告)日：2016-07-07
申请号：US15067517
申请日：2016-03-11
Applicant: EPISTAR CORPORATION
Inventor： Hong-Che CHEN , Chien-Fu SHEN , Chao-Hsing CHEN , Yu-Chen YANG , Jia-Kuen WANG , Chih-Nan LIN
CPC classification number: H01L33/38 , H01L33/20 , H01L33/40 , H01L33/405 , H01L33/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
Abstract: A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.
Abstract translation: 发光装置包括包括多个凹部和台面的发光半导体堆叠，所述多个凹部中的每一个包括底表面，并且所述台面包括上表面; 形成在台面的上表面上的第一电极; 分别形成在所述多个凹部的底面上的多个第二电极; 形成在所述发光半导体堆叠上并与所述第一电极接触的第一电极焊盘; 形成在所述发光半导体堆叠上并与所述多个第二电极接触的第二电极焊盘; 第一绝缘层，包括多个通道以暴露所述多个第二电极; 以及形成在所述第一绝缘层上的多个空间的第二绝缘层，其中所述多个空间被所述第一电极焊盘覆盖。
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公开(公告)号：US20140367733A1
公开(公告)日：2014-12-18
申请号：US14474633
申请日：2014-09-02
Applicant: Epistar Corporation
Inventor： Chien-Fu SHEN , Cheng-Ta Kuo , Wei-Shou Chen , Tsung-Hsien Liu , Yi-Wen Ku , Min-Hsun Hsieh
CPC classification number: H01L33/38 , H01L24/02 , H01L33/20 , H01L33/62 , H01L2224/04042 , H01L2224/48463 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
Abstract: A light-emitting device comprises: a light-emitting stack having an upper side, a first edge having an end point, and a second edge opposite to the first edge; a first bonding region arranged on the upper side, near the first edge, and far from the end point; a second bonding region separated from to the first bonding region by a first distance and being far from the end point; a third bonding region arranged on the upper side; a fourth bonding region separated from the third bonding region by a second distance longer than the first distance; a first electrode connected to the first bonding region; a second electrode connected to the second bonding region; a third electrode connected to the third bonding region; a fourth electrode connected to the fourth bonding region; and a fifth electrode connected to the first bonding region and pointing to the fourth bonding region.
Abstract translation: 发光装置包括：具有上侧的发光叠层，具有端点的第一边缘和与第一边缘相对的第二边缘; 第一接合区域，其布置在上侧，靠近第一边缘并且远离端点; 第二接合区域，与第一接合区域分离第一距离并且远离端点; 布置在上侧的第三接合区域; 第四接合区域，与所述第三接合区域隔开比所述第一距离长的第二距离; 连接到所述第一接合区域的第一电极; 连接到所述第二接合区域的第二电极; 连接到所述第三接合区域的第三电极; 连接到第四接合区域的第四电极; 以及连接到第一接合区域并指向第四接合区域的第五电极。
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公开(公告)号：US20140159091A1
公开(公告)日：2014-06-12
申请号：US14098911
申请日：2013-12-06
Applicant: EPISTAR CORPORATION
Inventor： Schang-Jing HON , Chao-Hsing CHEN , Tsun-Kai KO , Chien-Fu SHEN , Jia-Kuen WANG , Hung-Che CHEN
IPC: H01L33/62
CPC classification number: H01L33/387 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/54 , H01L33/62 , H01L2224/73265
Abstract: A light-emitting element comprises: a light-emitting semiconductor stack comprising a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a first protection layer on the light-emitting semiconductor stack and comprising a first through hole; and a conductive contact layer on the first protection layer and electrically connected to the first electrode through the first through hole.
Abstract translation: 发光元件包括：包含第一半导体层的发光半导体堆叠; 在所述第一半导体层上的第二半导体层; 以及在所述第一半导体层和所述第二半导体层之间的发光层; 在所述第一半导体层上的第一电极; 在所述发光半导体堆叠上的第一保护层，并且包括第一通孔; 以及在所述第一保护层上的导电接触层，并且通过所述第一通孔电连接到所述第一电极。
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公开(公告)号：US20190245116A1
公开(公告)日：2019-08-08
申请号：US16384890
申请日：2019-04-15
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Bo-Jiun HU , Tsung-Hsun CHIANG , Wen-Hung CHUANG , Kuan-Yi LEE , Yu-Ling LIN , Chien-Fu SHEN , Tsun-Kai KO
CPC classification number: H01L33/46 , H01L33/38 , H01L33/382 , H01L33/405
Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.
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