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1.发明公开ULTRA LOW-POWER CMOS BASED BIO-SENSOR CIRCUIT 审中-公开BIOSENSORSCHALTUNG AUF ULTRANIEDRIGLEISTUNGS-CMOS-BASIS
公开(公告)号：EP2521909A4
公开(公告)日：2017-07-26
申请号：EP11728544
申请日：2011-01-03
Applicant: IBM
Inventor： BANSAL ADITYA , ZAFAR SUFI
IPC: G01N27/403 , G01N27/414 , H03F3/70
CPC classification number: H03F3/70 , G01N27/4145 , Y10T436/11
Abstract: An apparatus configured to identify a material having an electric charge, the apparatus having: an inverting gain amplifier including a first field-effect transistor (FET) coupled to a second FET; wherein a gate of the first FET is configured to sense the electric charge and an output of the amplifier provides a measurement of the electric charge to identify the material.
Abstract translation: 一种被配置为识别具有电荷的材料的设备，所述设备具有：反相增益放大器，其包括耦合到第二FET的第一场效应晶体管（FET） 其中第一FET的栅极被配置为感测电荷，并且放大器的输出提供电荷的测量以识别材料。
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公开(公告)号：CA2786285A1
公开(公告)日：2011-07-07
申请号：CA2786285
申请日：2011-01-03
Applicant: IBM
Inventor： BANSAL ADITYA , ZAFAR SUFI
IPC: G01N27/403
Abstract: An apparatus configured to identify a material having an electric charge, the apparatus having: an inverting gain amplifier including a first field-effect transistor (FET) coupled to a second FET; wherein a gate of the first FET is configured to sense the electric charge and an output of the amplifier provides a measurement of the electric charge to identify the material.
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