公开(公告)号：DE2860318D1

公开(公告)日：1981-02-19

申请号：DE2860318

申请日：1978-11-30

Applicant: IBM

Inventor： BIALKO JOSEPH ALFON ,  LECHATON JOHN S

IPC: C23C14/04 ,  C23C14/34 ,  C23C14/40 ,  C23C14/44 ,  C23C14/50 ,  H01J37/34

Abstract: Isolating the anode shield of RF sputtering apparatus from the ground potential reduces the grounded surfaces to which the plasma is exposed and thereby increases the impedance between the plasma and the grounded surfaces. This improvement increases the resputtering rate significantly before the operating point of instability in the system is reached.