公开(公告)号：US3560364A

公开(公告)日：1971-02-02

申请号：US3560364D

申请日：1968-10-10

Applicant: IBM

Inventor： BURKHARDT PAUL J

IPC: C04B35/584 ,  B28B1/30 ,  C23C14/00 ,  C23C14/06 ,  C23F1/00 ,  H01B3/00 ,  H01G4/08 ,  B29C1/08 ,  C23C15/00

CPC classification number: C23F1/00 ,  C23C14/0005 ,  H01G4/085

Abstract: A METHOD IS PROVIDED FOR PRODUCTING EXTREMELY THIN, FREE-STANDING OR UNSUPPORTED FILMS OF SILICON NITRIDE, HAVING THE FORMULA SI3N4. THE METHOD INCLUDES THE INITIAL STEP OF SPUTTERED DEPOSITING ON A MOLYBDENUM SUBSTRATE, A THIN LAYER OF SILICON NITRIDE. THE ASSEMBLY IS THEN LOCATED IN AN OVEN, HEATED TO A TEMPERATURE RANGING FROM 500*C. TO 900*C., AND CHLORINE GAS INTRODUCED INTO THE OVEN. IN THIS MANNER, GASEOUS DISSOLUTION OF THE SUBSTRATE IS EFFECTED, RESULTING IN THE PRODUCTION OF THE FREE-STANDING FILM OF SILICON NITRIDE.

公开(公告)号：FR2356932A1

公开(公告)日：1978-01-27

申请号：FR7717612

申请日：1977-06-02

Applicant: IBM

Inventor： BURKHARDT PAUL J ,  POPONIAK MICHAEL R

IPC: G01N27/00 ,  G01N27/12 ,  G01N27/414 ,  H01L29/66 ,  G01N27/02 ,  H01L27/00 ,  H01L49/00