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Patent Agency Ranking
公开(公告)号：JPH0855312A
公开(公告)日：1996-02-27
申请号：JP10632294
申请日：1994-04-22
Applicant: IBM
Inventor： CAIN WILLIAM CHARLES , HEIM DAVID E , WANG PO-KANG
Abstract: PURPOSE: To obtain a constant field generated by ferromagnetic exchange coupling and a current and thus enable appropriate offset of influence thereof, by additionally providing a magnetic flux keeper layer and a spacer layer in a spin valve structure. CONSTITUTION: A magnetoresistive sensor 20 has a layered spin valve structure, including first and second thin layers 28, 34 of a ferromagnetic material and separated from each other by a spacer layer 32 of a non-magnetic metal. With a zero-application magnetic field, the direction of magnetization of the first layer 28 is caused to be in parallel to the longitudinal axis of the sensor 20 and perpendicular to the fixed direction of magnetization of the second layer 34. In addition, a thin magnetic flux keeper layer 24 is provided which is separated by the spacer layer 32 and has a fixed direction of magnetization opposite to the direction of magnetization of the second layer 34 and a product of thickness of the substantially same moment as the second layer to offset a static magnetic field from the second layer 34. A power source 48 causes a current to flow via the sensor 20 so as to generate a magnetic field offsetting ferromagnetic exchange coupling between the first and second layers 28, 34. Detection means 50 detects fluctuations in the resistance of the sensor 20 due to the difference in the rotation of magnetic fields of the first and second layers 28, 34.
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公开(公告)号：DE69326308D1
公开(公告)日：1999-10-14
申请号：DE69326308
申请日：1993-11-15
Applicant: IBM
Inventor： CAIN WILLIAM CHARLES , DIENY BERNARD , FONTANA ROBERT EDWARD , SPERIOSU VIRGIL SIMON
Abstract: A magnetoresistive sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a non-magnetic metallic layer, the magnetic easy axis of each of the ferromagnetic layers being aligned along the longitudinal axis of the ferromagnetic layers and perpendicular to the trackwidth of an adjacent magnetic storage medium. The sense current flowing in the sensor element generates a bias field which sets the direction of magnetization in each ferromagnetic layer at an equal, but opposite, angle theta with respect to the magnetic easy axis thus providing an angular separation of 2 theta in the absence of an applied magnetic signal. The magnetizations of both ferromagnetic layers are responsive to an applied magnetic field to change their angular separation by an amount 2 delta theta .
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公开(公告)号：SG44674A1
公开(公告)日：1997-12-19
申请号：SG1996005392
申请日：1994-04-26
Applicant: IBM
Inventor： CAIN WILLIAM CHARLES , HEIM DAVID EUGENE , WANG PO-KANG
Abstract: A magnetoresistive (MR) sensing system comprises an MR sensor 20 with a layered spin valve structure including thin first 28 and second 34, 38 layers of ferromagnetic material separated by a thin layer 32 of nonmagnetic metallic material. The magnetization direction of the first layer at a zero applied magnetic field is substantially parallel to the longitudinal dimension of the MR sensor and substantially perpendicular to the fixed or "pinned" magnetization direction of the second layer. A thin keeper layer 24 of ferromagnetic material is separated by a thin spacer layer 26 from the layered spin valve structure. This keeper layer has a fixed magnetization direction substantially opposite that of the second layer and a moment-thickness product substantially equal to that of the second layer for cancelling the magnetostatic field from the second layer. A current flow is produced through the MR sensor to produce a magnetic field of a sign and magnitude which cancels the ferromagnetic exchange coupling between the first and second layers. Variations in resistivity of the MR sensor due to difference in rotation of the magnetizations in the first and second layers are sensed as a function of the magnetic field being sensed.
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公开(公告)号：DE69326308T2
公开(公告)日：2000-04-20
申请号：DE69326308
申请日：1993-11-15
Applicant: IBM
Inventor： CAIN WILLIAM CHARLES , DIENY BERNARD , FONTANA ROBERT EDWARD , SPERIOSU VIRGIL SIMON
Abstract: A magnetoresistive sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a non-magnetic metallic layer, the magnetic easy axis of each of the ferromagnetic layers being aligned along the longitudinal axis of the ferromagnetic layers and perpendicular to the trackwidth of an adjacent magnetic storage medium. The sense current flowing in the sensor element generates a bias field which sets the direction of magnetization in each ferromagnetic layer at an equal, but opposite, angle theta with respect to the magnetic easy axis thus providing an angular separation of 2 theta in the absence of an applied magnetic signal. The magnetizations of both ferromagnetic layers are responsive to an applied magnetic field to change their angular separation by an amount 2 delta theta .
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公开(公告)号：SG42330A1
公开(公告)日：1997-08-15
申请号：SG1996000779
申请日：1993-11-15
Applicant: IBM
Abstract: A magnetoresistive sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a non-magnetic metallic layer, the magnetic easy axis of each of the ferromagnetic layers being aligned along the longitudinal axis of the ferromagnetic layers and perpendicular to the trackwidth of an adjacent magnetic storage medium. The sense current flowing in the sensor element generates a bias field which sets the direction of magnetization in each ferromagnetic layer at an equal, but opposite, angle theta with respect to the magnetic easy axis thus providing an angular separation of 2 theta in the absence of an applied magnetic signal. The magnetizations of both ferromagnetic layers are responsive to an applied magnetic field to change their angular separation by an amount 2 delta theta .
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