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公开(公告)号：DE69326308D1
公开(公告)日：1999-10-14
申请号：DE69326308
申请日：1993-11-15
Applicant: IBM
Inventor： CAIN WILLIAM CHARLES , DIENY BERNARD , FONTANA ROBERT EDWARD , SPERIOSU VIRGIL SIMON
Abstract: A magnetoresistive sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a non-magnetic metallic layer, the magnetic easy axis of each of the ferromagnetic layers being aligned along the longitudinal axis of the ferromagnetic layers and perpendicular to the trackwidth of an adjacent magnetic storage medium. The sense current flowing in the sensor element generates a bias field which sets the direction of magnetization in each ferromagnetic layer at an equal, but opposite, angle theta with respect to the magnetic easy axis thus providing an angular separation of 2 theta in the absence of an applied magnetic signal. The magnetizations of both ferromagnetic layers are responsive to an applied magnetic field to change their angular separation by an amount 2 delta theta .
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公开(公告)号：CA2054580A1
公开(公告)日：1992-06-12
申请号：CA2054580
申请日：1991-10-31
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE A , LAMBERT STEVEN E , MAURI DANIELE , PARKIN STUART S P , SPERIOSU VIRGIL S , WILHOIT DENNIS R
Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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公开(公告)号：SG44357A1
公开(公告)日：1997-12-19
申请号：SG1995002207
申请日：1993-08-12
Applicant: IBM
Inventor： BAUMGART PETER MICHAEL , DIENY BERNARD , GURNEY BRUCE ALVIN , SPERIOSU VIRGIL SIMON , WILHOIT DENNIS RICHARD
Abstract: A magnetoresistive read sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a nonmagnetic metallic layer. A layer of antiferromagnetic material is formed over one of the ferromagnetic layers to provide an exchange bias field which fixes or "pins" the magnetization direction in the one ferromagnetic layer. An interlayer of magnetically soft material is deposited between the ferromagnetic and antiferromagnetic layers separating the ferromagnetic layer from the antiferromagnetic layer and enhancing the exchange coupling, particularly in the instance where the ferromagnetic material is iron or an iron alloy.
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公开(公告)号：SG42305A1
公开(公告)日：1997-08-15
申请号：SG1996000086
申请日：1991-12-09
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE ALVIN , LAMBERT STEVEN EUGENE , MAURI DANIELE , PARKIN STUART STEPHEN PAPWORTH , SPERIOSU VIRGIL SIMON , WILHOIT DENNIS RICHARD
Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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公开(公告)号：DE69132027D1
公开(公告)日：2000-04-13
申请号：DE69132027
申请日：1991-12-09
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE ALVIN , LAMBERT STEVEN EUGENE , MAURI DANIELE , PARKIN STUART STEPHEN PAPWORTH , SPERIOSU VIRGIL SIMON , WILHOIT DENNIS RICHARD
Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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Patent Agency Ranking
公开(公告)号：DE69132027T2
公开(公告)日：2000-09-14
申请号：DE69132027
申请日：1991-12-09
Applicant: IBM
Inventor： DIENY BERNARD , GURNEY BRUCE ALVIN , LAMBERT STEVEN EUGENE , MAURI DANIELE , PARKIN STUART STEPHEN PAPWORTH , SPERIOSU VIRGIL SIMON , WILHOIT DENNIS RICHARD
Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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公开(公告)号：DE69326308T2
公开(公告)日：2000-04-20
申请号：DE69326308
申请日：1993-11-15
Applicant: IBM
Inventor： CAIN WILLIAM CHARLES , DIENY BERNARD , FONTANA ROBERT EDWARD , SPERIOSU VIRGIL SIMON
Abstract: A magnetoresistive sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a non-magnetic metallic layer, the magnetic easy axis of each of the ferromagnetic layers being aligned along the longitudinal axis of the ferromagnetic layers and perpendicular to the trackwidth of an adjacent magnetic storage medium. The sense current flowing in the sensor element generates a bias field which sets the direction of magnetization in each ferromagnetic layer at an equal, but opposite, angle theta with respect to the magnetic easy axis thus providing an angular separation of 2 theta in the absence of an applied magnetic signal. The magnetizations of both ferromagnetic layers are responsive to an applied magnetic field to change their angular separation by an amount 2 delta theta .
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公开(公告)号：DE69316708D1
公开(公告)日：1998-03-05
申请号：DE69316708
申请日：1993-11-01
Applicant: IBM
Inventor： BAUMGART PETER MICHAEL , DIENY BERNARD , GURNEY BRUCE ALVIN , NOZIERES JEAN-PIERRE , SPERIOSU VIRGIL SIMON , WILHOIT DENNIS RICHARD
Abstract: A magnetoresistive read sensor 30 based on the spin valve effect incorporates a multilayered, dual spin valve structure. The sensor read element includes first 31, second 35 and third 39 layers of ferromagnetic material separated from each other by layers of non-magnetic metallic material. The first and third layers of ferromagnetic material, i.e., the outer layers of the structure, have their magnetization orientation fixed, while the second, intermediate ferromagnetic layer is magnetically soft and has its magnetization oriented perpendicular to that of both the outer ferromagnetic layers in the absence of an applied magnetic field. In one preferred embodiment, the two outer ferromagnetic layers have their magnetizations fixed parallel to each other by exchange coupling with adjacent antiferromagnetic layers. In a second preferred embodiment, the directions or magnetization in the first and third layers of ferromagnetic material are aligned in an antiparallel orientation.
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公开(公告)号：SG42330A1
公开(公告)日：1997-08-15
申请号：SG1996000779
申请日：1993-11-15
Applicant: IBM
Abstract: A magnetoresistive sensor based on the spin valve effect in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers is described. The sensor read element includes two adjacent ferromagnetic layers separated by a non-magnetic metallic layer, the magnetic easy axis of each of the ferromagnetic layers being aligned along the longitudinal axis of the ferromagnetic layers and perpendicular to the trackwidth of an adjacent magnetic storage medium. The sense current flowing in the sensor element generates a bias field which sets the direction of magnetization in each ferromagnetic layer at an equal, but opposite, angle theta with respect to the magnetic easy axis thus providing an angular separation of 2 theta in the absence of an applied magnetic signal. The magnetizations of both ferromagnetic layers are responsive to an applied magnetic field to change their angular separation by an amount 2 delta theta .
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公开(公告)号：DE69216868D1
公开(公告)日：1997-03-06
申请号：DE69216868
申请日：1992-02-07
Applicant: IBM
Inventor： DIENY BERNARD , CURNEY BRUCE ALVIN , METIN SERHAT , PARKIN STUART STEPHEN PAPWORTH , SPERIOSU VIRGIL SIMON
Abstract: A magnetoresistive (MR) sensor comprising a layered structure formed on a substrate (11) includes a first (12) and a second (16) thin film layer (14) of magnetic material separated by a thin film layer of non-magnetic metallic material such as Cu, Au, or Ag, with at least one of the layers of ferromagnetic material formed of either cobalt or a cobalt alloy. The magnetization direction of the first ferromagnetic layer, at zero applied field, is set substantially perpendicular to the magnetization direction of the second ferromagnetic layer which is fixed in position. A current flow is produced through the sensor, and the variations in voltage across the MR sensor are sensed due to the changes in resistance produced by rotation of the magnetization in the front layer of ferromagnetic material as a function of the magnetic field being sensed.
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