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    3.
    发明专利
    未知

    公开(公告)号：FR2376229A1

    公开(公告)日：1978-07-28

    申请号：FR7735669

    申请日：1977-11-21

    Applicant: IBM

    Inventor： CASTELLANI EUGENE E ,  POWERS JOHN V ,  ROMANKIW LUBOMYS T

    IPC: C25D7/00 ,  C25D3/56 ,  C25D5/08 ,  C25D17/00 ,  C25D21/12 ,  G11B5/31 ,  G11B5/858 ,  H01F10/14 ,  H01F41/14 ,  H01F41/26

    Abstract: A thin film of low magnetostriction Permalloy 80% nickel - 20% iron +/- 1% is electroplated in a bath having a ratio of about 1.8:1 to 24:1 g/liter ratio of Ni to Fe ions with a plating current density from 10 ma/cm2 - 200 ma/cm2 when plating in sheet form or an Ni/Fe ratio of 25:1 to 85:1 with a current density of 2 ma/cm2 - 110 ma/cm2 when plating through a mask. The fluid in the system is constantly mixed, replenished with fresh iron, acid, and other reagents, is adjusted in temperature and subjected to a continuous laminar regime of mixing. Fresh solution is added to the bath from a reservoir where the above adjustments are made. The inlet for the fresh solution is at the lower end of the plating chamber and directed at a bath mixer which includes a slot through which the fresh solution is directed to optimize mixing in the plating chamber. Complexing agents are avoided. High speed plating is obtained with about 24.4 g/l of Ni++, 1.05 g/l of Fe++, 25 g/l of H3BO3, 0.2 g/l of Na saccharin and a pH of 1.5 to 3.6.

    MAGNETOSTRICTIVE ALLOY THIN FILM ELECTROPLATING
    6.
    发明专利
    MAGNETOSTRICTIVE ALLOY THIN FILM ELECTROPLATING 未知

    公开(公告)号：CA1141695A

    公开(公告)日：1983-02-22

    申请号：CA288228

    申请日：1977-10-06

    Applicant: IBM

    Inventor： CASTELLANI EUGENE E ,  POWERS JOHN V ,  ROMANKIW LUBOMYR T

    IPC: C25D7/00 ,  C25D3/56 ,  C25D5/08 ,  C25D17/00 ,  C25D21/12 ,  G11B5/31 ,  G11B5/858 ,  H01F10/14 ,  H01F41/14 ,  H01F41/26 ,  C25D5/02

    Abstract: MAGNETOSTRICTIVE ALLOY THIN FILM ELECTROPLATING METHOD A thin film of low magnetostriction Permalloy* 80% nickel - 20% iron ? 1% is electroplated onto a substrate in a bath having a ratio of from 5.8:1 to 23:1 ratio of Ni to Fe ions with a plating current density from 10 ma/cm2 - 200 ma/cm2 when plating in sheet form or an Ni/Fe ratio of from 25:1 to 86:1 with a current density of from 2 ma/cm2 - 60 ma/cm2 when plating through a mask. The fluid in the system is constantly mixed, replenished with fresh iron, acid, and other reagents, is adjusted in temperature and subjected to a continuous laminar regime of mixing. The Fe++ ion concentration required is inverse to the circulation of bath fluid across the substrate. Fresh solution is added to the bath from a reservoir where the above adjustments are made. The inlet for the fresh solution is at the lower end of the plating chamber and directed at a bath mixer which includes a slot through which the fresh solution is directed to optimize mixing in the plating chamber. Complexing agents are avoided. High speed plating is obtained with about 24.4 g/l of Ni++, 1.05 g/l of Fe ++, 25 g/l of H3BO3, 0.2 g/l of Na saccharin and a pH of 1.5 to 3.6. * Trade Mark

    Accurate electroplated gold conductor patterns - produced by double masking, for mfg. microelectronic and magnetic components
    7.
    发明专利
    Accurate electroplated gold conductor patterns - produced by double masking, for mfg. microelectronic and magnetic components 未知

    公开(公告)号：FR2354633A1

    公开(公告)日：1978-01-06

    申请号：FR7714017

    申请日：1977-05-03

    Applicant: IBM

    Inventor： ANDERSON RONALD L ,  CASTELLANI EUGENE E ,  MCCAFFREY PATRICK M ,  ROMANKIW LUBOMYR T

    IPC: H05K3/18 ,  C25D5/02 ,  H01L21/768 ,  H05K3/10 ,  H05K3/24 ,  H05K3/38 ,  H01L21/441

    Abstract: A metal pattern is made by selective electroplating on an underlay. A substrate is coated with a layer (I) providing adhesion, and then an underlay (II) followed by a thin, non-platable layer (III) onto which a mask is applied, forming a negative pattern. The exposed zone (IV) of layer (III) are removed; and the exposed zones of the underlay (II) are electroplated; then, and as required, the mask the remainder of layer (III), the bare underlay (II), and opt. layer (I), can be removed. Underlay (II) is pref. metal, esp. Cr, Ti, Ta, Nb, or Hf, whereas layer (III) is dielectric, esp. SiO2, Si3N4, Al2O3, SiO, an organo-silicate, or a polymer. Zones (IV) are pref. removed by plasma etching in at atmos. of C2Cl3F3 or C2Cl3F3 plus O2. The electroplated pattern is pref. Au, Cu, Ni, Ni-Fe, Pt, Pd, or their alloys with other metals; a lacquer mask is pref. used, whereas layer (I) is Cr, Ti, Ta, Nb, Al, Hf, or similar metals, and 100-1000 A thick. Underlay (II) is pref. 100-2000 A thick, and layer (III) 450 A thick. Method is used for providing metal patterns on microelectronic components; magnetic cylinder domin- or magnetic- components. Gold patterns for example, can be obtd. which do not lift off at their edges.

    PERMALLOY THIN FILM ELECTROPLATING SYSTEM
    8.
    发明专利
    PERMALLOY THIN FILM ELECTROPLATING SYSTEM 未知

    公开(公告)号：CA1159792A

    公开(公告)日：1984-01-03

    申请号：CA410149

    申请日：1982-08-25

    Applicant: IBM

    Inventor： CASTELLANI EUGENE E ,  POWERS JOHN V ,  ROMANKIW LUBOMYR T

    IPC: C25D3/56

    Abstract: MAGNETOSTRICTIVE ALLOY THIN FILM ELECTROPLATING METHOD A thin film of low magnetostriction Permalloy* 80% nickel - 20% iron + 1% is electroplated onto a substrate in a bath having a ratio of from 5.8:1 to 23:1 ratio of Ni to Fe ions with a plating current density from 10 ma/cm2 - 200 ma/cm2 when plating in sheet form or an Ni/Fe ratio of from 25:1 to 86:1 with a current density of from 2 ma/cm2 - 60 ma/cm2 when plating through a mask. The fluid in the system is constantly mixed, replenished with fresh iron, acid, and other reagents, is adjusted in temperature and subjected to a continuous laminar regime of mixing. The Fe++ ion concentration required is inverse to the circulation of bath fluid across the substrate. Fresh solution is added to the bath from a reservoir where the above adjustments are made. The inlet for the fresh solution is at the lower end of the plating chamber and directed at a bath mixer which includes a slot through which the fresh solution is directed to optimize mixing in the plating chamber. Complexing agents are avoided. High speed plating is obtained with about 24.4 g/l of Ni++, 1.05 g/l of Fe , 25 g/l of H3BO3, 0.2 g/l of Na saccharin and a pH of 1.5 to 3.6. * Trade Mark

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