公开(公告)号：CA1204872A

公开(公告)日：1986-05-20

申请号：CA454742

申请日：1984-05-18

Applicant: IBM

Inventor： CHAMBERLAIN SAVVAS G ,  PENNINGTON KEITH ,  ROHRER GENE D

IPC: G06G7/19 ,  H04N1/409

Abstract: The invention discloses apparatus for receiving a plurality of inputs and subjecting the inputs to a Laplacian operator function. The apparatus comprises CCD shift register means for receiving the inputs and introducing positive and negative weights to respective ones of the inputs, and combines the inputs to produce the Laplacian operator function.

公开(公告)号：CA1186784A

公开(公告)日：1985-05-07

申请号：CA383691

申请日：1981-08-12

Applicant: IBM

Inventor： CHAMBERLAIN SAVVAS G ,  RUTZ RICHARD F

IPC: H04N5/335 ,  G06K7/10 ,  H01L27/146 ,  H01L27/148 ,  H01L27/14 ,  H04N5/30

Abstract: SOLID STATE IMAGING DEVICE A solid state optical-to-electrical transducer or imaging device involving an integrated optical-to-electrical signal converter made up of a semiconductor photon responsive carrier generating device with gain coupled to a parallel to serial signal combining output. A phototransistor has as its collector the same integrated layer of material as a charge-coupled device output shift register. The charge-coupled device segments have carrier flow barriers which reduces the number of clock phases. A potential well is provided between the phototransistor and the charge-coupled device to enhance light sensitivity.

公开(公告)号：CA1090457A

公开(公告)日：1980-11-25

申请号：CA282968

申请日：1977-07-18

Applicant: IBM

Inventor： CHAMBERLAIN SAVVAS G

IPC: H01L31/10 ,  H01L31/103 ,  H01L31/11

Abstract: IMPROVED PHOTODIODE STRUCTURE HAVING AN ENHANCED BLUE COLOR RESPONSE Image detectors and scanners employing n+ - p photodiodes as the photosensitive element tend to have a low blue color response relative to the red color output due to loss of photogenerated carriers near the diode surface because of surface recombination, and because of a small minority carrier lifetime due to the high doping level of the n-region relative to the acceptor doping density of the substrate. The surface recombination and low lifetime cause loss of quantum efficiency at wavelengths less than 4200 .ANG., which is the blue region. An improved photodiode is provided including a silicon p substrate, a junction formed by a phosphorous diffusion of low doping density, and a high dose of arsenic or phosphorous ion implantation to provide a shallow implant to create a built-in electric field which repels the photogenerated minority carriers away from the surface and towards the junction to be collected.

公开(公告)号：FR2363197A1

公开(公告)日：1978-03-24

申请号：FR7720045

申请日：1977-06-21

Applicant: IBM

Inventor： CHAMBERLAIN SAVVAS G

IPC: H01L31/10 ,  H01L31/103 ,  H01L31/11 ,  H01L31/06 ,  H01L27/14

公开(公告)号：FR2376517A1

公开(公告)日：1978-07-28

申请号：FR7736922

申请日：1977-11-30

Applicant: IBM

Inventor： CHAMBERLAIN SAVVAS G ,  HELLER LAWRENCE G

IPC: H04N3/12 ,  H01L27/148 ,  H01L27/14 ,  G11C19/28

公开(公告)号：FR2336805A1

公开(公告)日：1977-07-22

申请号：FR7634823

申请日：1976-11-12

Applicant: IBM

Inventor： CHAMBERLAIN SAVVAS G ,  HELLER LAWRENCE G

IPC: H01L31/10 ,  H01L31/113 ,  H01L31/06

Abstract: A solid-state charge-coupled photoconductor for image scanning including a p-type substrate having a silicon dioxide layer on the surface thereof with the exception of one or more areas in which an n+ diffusion area is located. A polysilicon gate is located over the silicon dioxide layer and a second silicon dioxide layer is located over the polysilicon layer and the n+ diffusion area except for a portion where a first aluminum contact window is provided which extends through the second silicon dioxide layer to the surface of the n+ diffusion area and where a second aluminum contact window extends through the second polysilicon gate to the surface of the polysilicon gate. The photosensitivity of the device is electronically controlled due to the relatively small n+ layer which is reversed biased with respect to the larger gate area.