公开(公告)号：DE1256995B

公开(公告)日：1967-12-21

申请号：DEJ0026538

申请日：1964-09-11

Applicant: IBM

Inventor： CHIOU CHARLES ,  COUNTY WESTCHESTER ,  CONNELL RICHARD ALLEN ,  MISSION SHAWNEE ,  COUNTY JOHNSON ,  SERAPHIM DONALD PHILIP

IPC: C23C14/14 ,  C23C14/58 ,  G11C11/44 ,  H01L39/00

Abstract: A superconductive memory element is made by vacuum depositing a film which is a mixture of germanium and a superconductor on an insulating substrate and then annealing the film to concentrate the germanium into particles within the film. The film preferably consists of 5-40% by weight of germanium and the residue tin or indium, and is 800-2000ALPHA thick. Annealing is effected at 110 DEG C. for 42 hours in vacuo. The germanium and tin or indium may be deposited simultaneously from separate boats or from a mixture in a common boat. In the latter case the mixture is heated slowly to a temperature below the evaporating temperature of either metal and then quickly raised to a temperature above the evaporating temperature of both. Suitable materials for the substrate are glass, mica and resin.