公开(公告)号：FR2401562A1

公开(公告)日：1979-03-23

申请号：FR7820732

申请日：1978-07-05

Applicant: IBM

Inventor： GANI VENKAPPA L ,  MONTEGARI FRANK A

IPC: H01L27/07 ,  H03K17/60 ,  H03K19/086 ,  H03K19/08

公开(公告)号：FR2412988A1

公开(公告)日：1979-07-20

申请号：FR7833618

申请日：1978-11-21

Applicant: IBM

Inventor： GANI VENKAPPA L ,  MONTEGARI FRANK A

IPC: H01L27/082 ,  H01L21/8222 ,  H01L21/8226 ,  H03K19/082 ,  H03K19/173 ,  H03K19/08 ,  H01L27/06

公开(公告)号：CA1100647A

公开(公告)日：1981-05-05

申请号：CA309381

申请日：1978-08-15

Applicant: IBM

Inventor： GANI VENKAPPA L ,  MONTEGARI FRANK A

IPC: H01L27/082 ,  H01L21/8222 ,  H01L21/8226 ,  H03K19/082 ,  H03K19/173

Abstract: HIGH DENSITY INTEGRATED LOGIC CIRCUIT The disclosed logic circuit includes one transistor and a plurality of Schottky barrier diodes in each logic circuit "cell", a plurality of such cells being interconnected to perform desired logic functions. Cell interconnections are made by interconnecting metallurgy which can have a relatively high resistance with relatively long interconnecting paths between a sending circuit cell and a receiving circuit cell. The undesirable effects of this metallurgy resistance are overcome by driving the base of the receiving transistor through a base drive resistor in the sending cell.