公开(公告)号：JP2004071920A

公开(公告)日：2004-03-04

申请号：JP2002230794

申请日：2002-08-08

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： SEIHIKARI YOSHINORI ,  MOROOKA MITSUO ,  YOSHIMURA YUSUKE ,  HIROMORI TADASHI

IPC: G02F1/1368 ,  C23F1/44 ,  G09F9/30 ,  G09F9/35 ,  H01L21/28 ,  H01L21/306 ,  H01L21/3205 ,  H01L23/52 ,  H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide an etchant which enables formation of a taper-shaped conductive wiring with ease and high precision.
SOLUTION: An etching solution is provided to carry out etching against a conductive film consisting of a first layer, which consists of metal to be passivated, and a second layer provided on the first layer. The etchant comprises nitric acid, hydrofluoric acid and a compound which is an acetate ion source, and passivates the first layer.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2000067657A

公开(公告)日：2000-03-03

申请号：JP23985898

申请日：1998-08-26

Applicant: IBM

Inventor： TAKATSUJI HIROSHI ,  HIROMORI TADASHI ,  TSUJI SATOSHI

IPC: B05D5/00 ,  B32B17/10 ,  C23C14/08 ,  C23C14/58 ,  H01B5/14 ,  H01B13/00

Abstract: PROBLEM TO BE SOLVED: To provide a transparent conductive film excellent in light transmissivity in a wide wavelength range from a visible beam to an infrared ray. SOLUTION: A transparent conductive film with a high transmissivity of about 800% or more in a wavelength range of 450-3200 nm is obtained by giving heat treatment to a film mainly containing a zinc-indium oxide (IZO) under a low oxygen atmosphere. The resistivity of the transparent conductive film is about 3.0×10-3 Ωcm or less. The film mainly containing the IZO is substantially composed of amorphous or fine crystals and the film in such a structure deposited in a sputtering method.