公开(公告)号：JP2001033810A

公开(公告)日：2001-02-09

申请号：JP19189499

申请日：1999-07-06

Applicant: IBM

Inventor： KATSU YOSHIHIRO ,  YAMASHITA HIROSHI ,  KIMURA YASUHIRO ,  TSUJI SATOSHI

IPC: G06F3/041 ,  G02F1/13 ,  G02F1/133 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G06F3/03 ,  G06F3/033 ,  G02F1/1365

Abstract: PROBLEM TO BE SOLVED: To provide the device and method capable of effectively performing processing on pixel areas of a display device. SOLUTION: On each pixel area 41 on a liquid crystal TFT array substrate, an ITO transparent electrode 43, a gate line 48, a data line 46, a TFT active element 45, an identification mark 50, etc., are formed. The identification mark 50 is provided on the gate line 48 by forming a silver bar code. Since the identification mark is provided in the pixel area, it is possible to surely identify the transistor to be repaired, by detecting the identification mark, for instance, in repair processing of a TFT array substrate. Moreover, in an information processor for inputting graphics and characters onto a screen by using a laser pen, it is possible to accurately specify a locus of the pen by specifying a position of the pixel area from the identification mark detected by the pen, and to recognize inputted graphics, etc., in details.

公开(公告)号：JP2000067657A

公开(公告)日：2000-03-03

申请号：JP23985898

申请日：1998-08-26

Applicant: IBM

Inventor： TAKATSUJI HIROSHI ,  HIROMORI TADASHI ,  TSUJI SATOSHI

IPC: B05D5/00 ,  B32B17/10 ,  C23C14/08 ,  C23C14/58 ,  H01B5/14 ,  H01B13/00

Abstract: PROBLEM TO BE SOLVED: To provide a transparent conductive film excellent in light transmissivity in a wide wavelength range from a visible beam to an infrared ray. SOLUTION: A transparent conductive film with a high transmissivity of about 800% or more in a wavelength range of 450-3200 nm is obtained by giving heat treatment to a film mainly containing a zinc-indium oxide (IZO) under a low oxygen atmosphere. The resistivity of the transparent conductive film is about 3.0×10-3 Ωcm or less. The film mainly containing the IZO is substantially composed of amorphous or fine crystals and the film in such a structure deposited in a sputtering method.

公开(公告)号：JPH10270446A

公开(公告)日：1998-10-09

申请号：JP9011097

申请日：1997-03-24

Applicant: IBM

Inventor： TSUJI SATOSHI ,  TAKATSUJI HIROSHI ,  TSUJIMOTO KATSUHIRO

IPC: H01L23/52 ,  B32B15/02 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49

Abstract: PROBLEM TO BE SOLVED: To obtain a low-electric-resistance wiring layer having a high thermal stability, high stress-migration resistance and no defect such as hillock by providing a multi-layer wiring composed of layers having substantially same components where the grain size of each layer is nearly equal to its thickness. SOLUTION: A wiring layer 50 is composed of layers 52, 54, 56 having substantially the same compsn. on a substrate 17. The size d of the crystal grains 60 is pref. nearly equal to the thickness h of each layer 52, 54, 56 or has a relation of 0.5

公开(公告)号：JPH10125619A

公开(公告)日：1998-05-15

申请号：JP28769596

申请日：1996-10-09

Applicant: IBM

Inventor： TAKATSUJI HIROSHI ,  TSUJI SATOSHI ,  KITAHARA HIROAKI

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To realize a wiring layer of low electric resistance which has superior thermal stability and no defects such as hillock by forming a first layer, whose main component is A and forming a second layer whose main component is amorphous phase having electronic resistance higher than that of the first layer, on the whole surface of the first layer. SOLUTION: A first thin dense layer whose main component is Al is formed on a substrate, and an intermediate layer acting as a conducting layer is formed on the first layer. Via the intermediate layer, a second layer having almost the same composition as the first layer is formed, and a wiring layer is formed. The main phase of the second layer is an amorphous phase having electric resistance higher than the first layer. By adding Cu or the like as an additional element to the wiring layer, an Al-Cu alloy thin film is formed. Thereby a wiring layer of low electric resistance, which has superior thermal stability and stress migration resistance characteristics and is free from defect such as hillock, can be formed.

公开(公告)号：JPH07230603A

公开(公告)日：1995-08-29

申请号：JP1840194

申请日：1994-02-15

Applicant: IBM

Inventor： WATANUKI MASAAKI ,  TSUJI SATOSHI ,  IKEDA YOSHIHIRO

IPC: G11B5/02 ,  G11B5/00 ,  G11B5/127 ,  G11B5/39 ,  G11B5/58 ,  G11B9/00 ,  G11B9/14

Abstract: PURPOSE: To improve a recording speed by recording a signal in a magnetic recording medium by a magnetic field generated from a chip according to the signal current by impressing a signal current to a coil. CONSTITUTION: The chip 11 is formed closely to the magnetic recording medium 12, and the coil 13 is formed on the medium 12. The chip 11 is connected with a rough adjusting mechanism 14 and a fine adjusting mechanism 15 to be position-controlled. The rough adjusting mechanism 14 is a voice motor, e.g. and as the fine adjusting mechanism 15, a piezo-element, etc., are used. An X-direction and Y-direction, namely directions parallel with the surface of the magnetic recording medium, are adjusted by the fine adjusting mechanism 15 connected to the chip, and a Z-direction vertical to the surface of the magnetic recording medium adjusted by a Z pizeo-element formed at the lower part of the medium. A piezo-driver 17 is connected to the Z element. The coil 13 is constituted of a lithograph on the medium 12, and this coil 13 switches the magnetic direction of the tip of the chip.