公开(公告)号：JP2001308184A

公开(公告)日：2001-11-02

申请号：JP2001070270

申请日：2001-03-13

Applicant: IBM

Inventor： JONATHAN D CHAPPURUSOKORU ,  IVERS THOMAS H ,  MCGAHAY VINCENT J ,  STAMPER ANTHONY K

IPC: H01L23/522 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a shielded interconnection for reducing capacitive coupling between interconnecting lines in an integrated circuit device having interconnecting lines isolated by an interlayer dielectric. SOLUTION: Interconnecting lines are provided with a thin side wall conductive shield isolated from interconnecting lines by a thin side wall dielectric. Crosstalk between adjacent lines in an interconnection layer is reduced by a side wall shield. The thin side wall dielectric material can be selected to reduce capacitance between the side wall shield and the interconnecting lines. An interlayer dielectric can be selected to enhance defect resistance and mechanical strength during fabrication of a device. A method for fabricating shielded interconnections is also provided.