公开(公告)号：GB1095208A

公开(公告)日：1967-12-13

申请号：GB2361666

申请日：1966-05-26

Applicant: IBM

Inventor： JONES ARTHUR SCOTT ,  VAUGHAN ERIC VICTOR ,  PASCUAL RAFAEL

IPC: H01R4/50 ,  H01R12/52 ,  H05K1/11 ,  H05K3/30 ,  H05K3/36

Abstract: 1,095,208. Soldering. INTERNATIONAL BUSINESS MACHINES CORPORATION. May 26, 1966, No. 23616/66. Heading B3R. [Also in Division H2] In making soldered connections between printed circuitry on two adjacent panels, e.g. at a right-angle junction, an intermediate connector is located between the panels so that bridging conductors on its outer surface contact the respective printed conductor, and solder balls inserted in the contact areas are melted by heat supplied from an element or hot air stream through a bore in the connector. The connector may be of a ceramic material and of circular cylindrical form with encircling conducting bands, or alternatively of triangular cross-section with conductors on one or two faces. Alternatively, the connections are made by dip coating the connector and printed conductors with tin lead or similar solder.

公开(公告)号：DE2233453A1

公开(公告)日：1973-02-22

申请号：DE2233453

申请日：1972-07-07

Applicant: IBM

Inventor： HEARN BRIAN RICHARD ,  JONES ARTHUR SCOTT ,  KINGTON BRIAN WILLIAM ,  PATON ANDREW ,  VIGAR JAMES MICHAEL LINFORD ,  PASCUAL RAFAEL

IPC: G11B5/187 ,  G11B5/245 ,  G11B5/31 ,  G11B5/22

公开(公告)号：GB1195944A

公开(公告)日：1970-06-24

申请号：GB1130068

申请日：1968-03-08

Applicant: IBM

Inventor： HOBBS DAVID EDWARD ,  JONES ARTHUR SCOTT

IPC: H01L21/311

Abstract: 1,195,944. Etching silicon oxide material. INTERNATIONAL BUSINESS MACHINES CORP. 8 March, 1968, No. 11300/68. Heading B6J. [Also in Division H1] Silicon oxide materials, especially of silicon monoxide, are etched by aqueous solutions containing hydrofluoric acid and potassium permanganate at temperatures between 10 and 60‹ C. The solutions preferably contain between 50 and 300 grams/litre of hydrofluoric acid and between 1 and 15 gms./litre of potassium permanganate, optionally in the presence of glacial acetic acid or phosphoric acid. The etohant is particularly useful in the construction of printed circuits, wherein the silicon oxide is coated with a metal layer and a photo-resist which are substantially unaffected by the etchant. In particular, a workpiece, Fig. 1, which comprises a substrate 1 of copper, a layer 2 of chromium, a silicon monoxide layer 3, a copper layer 4 and a photo-resist 5 may be provided with an aperture 6 by washing away the resist 5 in the exposed areas, etching through layer 4 with FeCl 3 , through layer 3 with HF/KMnO 4 and through layer 2 with K 3 Fe(CN) 6 , before electro-deposition of copper therein.