公开(公告)号：KR20070092105A

公开(公告)日：2007-09-12

申请号：KR20070017933

申请日：2007-02-22

Applicant: IBM

Inventor： KANAKASABAPATHY SIVANANDHA K ,  ABRAHAM DAVID WILLIAM

IPC: H01L27/105

CPC classification number: H01L23/544 ,  H01L27/222 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: A method for aligning a semiconductor device structure is provided to align efficiently even a first mark set by forming first and second align mark sets in the same mask level. A first align mark set(106a) is formed in the lower level of a semiconductor device structure, and a second align mark set(106b) is formed near the first align mark set. An opaque layer is formed on the lower level of the semiconductor device structure including first and second align mark sets. A part of the opaque layer corresponding to the position of the first align mark set is opened so that the first align mark set is optically monitored and the second align mark set is left as the second align mark is initially covered with the opaque layer. The opaque layer is lithographically patterned by using the optically monitored first align mark set. The first and the second align mark sets can include both align marks(102) and overlay boxes(104).

Abstract translation: 提供了一种用于对准半导体器件结构的方法，用于通过在相同的掩模级中形成第一和第二对准标记组来高效地对准第一标记集。 第一对准标记组（106a）形成在半导体器件结构的下层，并且在第一对准标记组附近形成第二对准标记组（106b）。 在包括第一和第二对准标记组的半导体器件结构的下层上形成不透明层。 对应于第一对准标记组的位置的不透明层的一部分被打开，使得第一对准标记组被光学监测，并且随着第二对准标记最初被不透明层覆盖，留下第二对准标记组。 通过使用光学监测的第一对准标记集，将不透明层光刻图案化。 第一和第二对准标记集合可以包括对准标记（102）和重叠框（104）。