公开(公告)号：KR20070092105A

公开(公告)日：2007-09-12

申请号：KR20070017933

申请日：2007-02-22

Applicant: IBM

Inventor： KANAKASABAPATHY SIVANANDHA K ,  ABRAHAM DAVID WILLIAM

IPC: H01L27/105

CPC classification number: H01L23/544 ,  H01L27/222 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: A method for aligning a semiconductor device structure is provided to align efficiently even a first mark set by forming first and second align mark sets in the same mask level. A first align mark set(106a) is formed in the lower level of a semiconductor device structure, and a second align mark set(106b) is formed near the first align mark set. An opaque layer is formed on the lower level of the semiconductor device structure including first and second align mark sets. A part of the opaque layer corresponding to the position of the first align mark set is opened so that the first align mark set is optically monitored and the second align mark set is left as the second align mark is initially covered with the opaque layer. The opaque layer is lithographically patterned by using the optically monitored first align mark set. The first and the second align mark sets can include both align marks(102) and overlay boxes(104).

Abstract translation: 提供了一种用于对准半导体器件结构的方法，用于通过在相同的掩模级中形成第一和第二对准标记组来高效地对准第一标记集。 第一对准标记组（106a）形成在半导体器件结构的下层，并且在第一对准标记组附近形成第二对准标记组（106b）。 在包括第一和第二对准标记组的半导体器件结构的下层上形成不透明层。 对应于第一对准标记组的位置的不透明层的一部分被打开，使得第一对准标记组被光学监测，并且随着第二对准标记最初被不透明层覆盖，留下第二对准标记组。 通过使用光学监测的第一对准标记集，将不透明层光刻图案化。 第一和第二对准标记集合可以包括对准标记（102）和重叠框（104）。

公开(公告)号：EP1514274A4

公开(公告)日：2008-04-02

申请号：EP02807323

申请日：2002-11-15

Applicant: IBM

Inventor： ABRAHAM DAVID WILLIAM ,  TROUILLOUD PHILIP LOUIS

IPC: G11C11/15 ,  G11C7/04 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/18 ,  G11C7/02 ,  G11C11/00

CPC classification number: H01L27/222 ,  G11C7/04 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/10

Abstract: A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region (20) includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell (50) via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.

公开(公告)号：JP2007335861A

公开(公告)日：2007-12-27

申请号：JP2007151000

申请日：2007-06-06

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ABRAHAM DAVID WILLIAM ,  PARKIN STUART STEPHEN ,  WORLEDGE DANIEL CHRISTOPHER ,  BROWN STEPHEN L

IPC: H01L21/8246 ,  G11C11/15 ,  H01L27/105 ,  H01L43/08 ,  H01L43/12

CPC classification number: G11C11/16

Abstract: PROBLEM TO BE SOLVED: To provide a toggle type magnetic tunnel junction configured to be capable of precisely controlling the magnetic anisotropy axis of a ferromagnetic layer. SOLUTION: A semiconductor device formed between a word line and bit line has a growth layer, antiferromagnetic layer formed on the growth layer, a pin layer formed on the antiferromagnetic layer, a tunnel barrier layer formed on the pin layer, and a free layer formed on the tunnel barrier layer. The word line and bit line are arranged so that the two lines may become almost orthogonal to each other. Meanwhile, the growth layer has tantulum with thickness of more than about 75 Å. Furthermore, the pin layer has one or more pin ferromagnetic sublayers. The tunnel barrier layer has magnesium oxide. Lastly, the free layer has two or more free ferromagnetic sublayers having a magnetic anisotropy axis oriented to about 45 degrees from the word line and bit line, respectively. The semiconductor device can have a magnetic tunnel junction to be used in an MRAM circuit for example. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种构造成能够精确地控制铁磁层的磁各向异性轴的肘节型磁隧道结。 形成在字线和位线之间的半导体器件具有生长层，形成在生长层上的反铁磁层，形成在反铁磁性层上的引脚层，形成在引脚层上的隧道势垒层，以及 形成在隧道势垒层上的自由层。 字线和位线被布置成使得两条线可能变得彼此几乎正交。 同时，生长层具有超过约75埃的厚度。 此外，引脚层具有一个或多个引脚铁磁性子层。 隧道势垒层具有氧化镁。 最后，自由层具有两个或多个自由铁磁子层，其具有分别与字线和位线定向成约45度的磁各向异性轴。 半导体器件可以具有例如在MRAM电路中使用的磁性隧道结。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JPH11273336A

公开(公告)日：1999-10-08

申请号：JP2400399

申请日：1999-02-01

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレイション

Inventor： ABRAHAM DAVID WILLIAM ,  TROUILLOUD PHILIP LOUIS

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC classification number: G11C11/16

Abstract: PROBLEM TO BE SOLVED: To obtain a magnetic device which uses applied magnetic write stimula tion and includes a variable magnetic area where two kinds of magnetic state can be imposed in stimulation. SOLUTION: When electricity passes through the device 109 thereafter, the opposite alignment of the magnetic states of the variable magnetic area and the closest reference magnetic area can be sensed and then binary storing capability is obtained. This method limits the magnetic write stimulation to only some preferable part of the variable magnetic area, e.g. the part where two kinds of magnetic state can securely be written so that they are opposite to each other. The magnetic write stimulation is limited to some preferable part of the variable magnetic area by forming a thin and long structure so that a bit line 105 or word line 103 relating to the application of the magnetic stimulation is made narrow or its longitudinal size is larger than the lateral sizes of one or both of the word line 103 and bit line 105. This principle is applicable to a magnetic random access(MRAM) array using a magnetic tunnel junction(MTJ) cell at the intersection of the bit line 105 and word line 103.

Abstract translation: 要解决的问题：获得使用施加磁写入激励的磁性装置，并且包括可以在刺激中施加两种磁状态的可变磁场。 解决方案：此后，当电通过装置109时，可以感测到可变磁场和最接近的参考磁场的磁状态的相反对准，然后获得二进制存储能力。 该方法将磁写入刺激限制在可变磁区的一些优选部分，例如， 可以安全地写入两种磁状态使得它们彼此相对的部分。 通过形成薄且长的结构，磁写入刺激被限制在可变磁场的一些优选部分，使得与施加磁刺激有关的位线105或字线103变窄或者其纵向尺寸大于 字线103和位线105之一或两者的横向尺寸。该原理适用于在位线105和字线交叉处使用磁性隧道结（MTJ）单元的磁随机存取（MRAM）阵列 103。

公开(公告)号：JPH11273337A

公开(公告)日：1999-10-08

申请号：JP2634499

申请日：1999-02-03

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレイション

Inventor： ABRAHAM DAVID WILLIAM ,  GALLAGHER WILLIAM JOSEPH ,  TROUILLOUD PHILIP LOUIS

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L27/224 ,  G11C11/15 ,  G11C11/16

Abstract: PROBLEM TO BE SOLVED: To obtain a magnetic memory which has a 1st and a 2nd crossing conductor forming an intersection area. SOLUTION: The magnetic memory cell 642 includes a variable magnetic area having a magnetic axis given two magnetization direction along itself, and consequently two kinds of state that the cell can change into according to electricity applied thereto and the resulting magnetic stimulation are provided. In order to enable the predictable development of a magnetic pattern from the 1st direction to the 2nd direction, the asymmetry of the magnetic stimulation applied to the cell while some state is written thereto is disclosed. Further, the layout of the cell or the physical asymmetry of magnetism which enables the predictable development of the pattern are also disclosed. This principle is applicable to a magnetic random access memory(MRAM) array using a magnetic tunneling junction cell at the intersection of a bit line and a word line supplying electricity and the resulting magnetic stimulation so as to write the cell therein.

Abstract translation: 要解决的问题：获得具有形成交叉区域的第一和第二交叉导体的磁性存储器。 解决方案：磁存储单元642包括具有沿其自身给定两个磁化方向的磁轴的可变磁区，并且因此提供了根据施加到其上的电池可以改变的两种状态，并且提供了所得到的磁刺激。 为了实现从第1方向到第2方向的磁性图案的可预测的发展，公开了一些状态被写入时施加到单元的磁刺激的不对称性。 此外，还公开了能够预测图案的发展的单元的布局或磁性的物理不对称性。 该原理适用于在位线和提供电力的字线的交叉处使用磁性隧道结单元的磁性随机存取存储器（MRAM）阵列和所产生的磁刺激，以便在其中写入单元。

公开(公告)号：JP2005117021A

公开(公告)日：2005-04-28

申请号：JP2004230703

申请日：2004-08-06

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ABRAHAM DAVID WILLIAM ,  O'SULLIVAN EUGENE JOHN

IPC: H01L21/314 ,  C23F4/00 ,  G11B5/31 ,  G11B5/39 ,  H01F10/32 ,  H01F41/34 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/12

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  C23F4/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3254 ,  H01F41/308 ,  H01F41/34 ,  H01L43/12 ,  Y10T428/12542

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming patterns on a magnetic thin film (and an obtained structure). SOLUTION: The method comprises a step of transforming a part of the magnetic thin film to a non-magnetic and electrically insulating state by using a chemical transformation of the part of the magnetic thin film. By exposing the magnetic thin film to a reactive plasma having a low output, magnetic and electrical properties can be transformed, while an adhesive property of the magnetic thin film being left as it is. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种在磁性薄膜上形成图案的方法（和获得的结构）。 解决方案：该方法包括通过使用该磁性薄膜的一部分的化学变换将一部分磁性薄膜转变为非磁性和电绝缘状态的步骤。 通过将磁性薄膜暴露于具有低输出的反应性等离子体，可以转变磁性和电性能，同时使磁性薄膜的粘合性能保持原样。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JPH11317071A

公开(公告)日：1999-11-16

申请号：JP2629199

申请日：1999-02-03

Applicant: IBM

Inventor： ABRAHAM DAVID WILLIAM ,  GALLAGHER WILLIAM JOSEPH ,  TROUILLOUD PHILIP LOUIS

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To improve the quality and the uniformity of responses with respect to an applied magnetic write stimulation by providing at least magnetic tunnel junctions which are operatable by using at least one electrode and which are simultaneously writable so as to be in an averaged state in acordance with magnetic stimulation applied to them by first and second electrodes. SOLUTION: A magnetic memory cell 109 consisting of magnetic tunnel junctions 108a, 108b is provided between conductors 103, 105. The magnetic tunnel junctions 108a, 108b include reference areas 120a, 120b, tunnel areas 122a, 122b and free areas 124a, 124b. Writing of the magnetic cell 109 is executed by changing magnetization directions being in the free areas 124a, 124b in accordance with electric signal applied by the conductors 103, 105, or resultingly a magnetic stimulation. An effective operation window of an electric and resulting magnetic stimulations can be obtained in the whole areas of an array by the averaged response of the magnetic tunnel junctions 108a, 108b.

公开(公告)号：JPH11288585A

公开(公告)日：1999-10-19

申请号：JP2625899

申请日：1999-02-03

Applicant: IBM

Inventor： ABRAHAM DAVID WILLIAM ,  BATSON PHILIP EDWARD ,  SLONCZEWSKI JOHN ,  TROUILLOUD PHILIP LOUIS

IPC: G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To make an electric interaction generate only at a favorable part by allowing a first magnetic layer to be changable to one side of two kinds of magnetic states opposing along its axis and allowing the favorable part of the first magnetic layer to place its center around the center point of the axis. SOLUTION: In a magnetic tunnel junction device 109, a tunnel is ristricted in the favorable one part of a free magnetic region 124 by using a smaller tunnel region 122 and the size of a reference magnetic region 120 is made to be the same as that of the tunnel region 122. Insulation regions 1301 , 1302 preventing electric tunnels due to remaining parts of the layer 124 existing at the outside of the favorable part are used in an adjacent relation with the tunnel region 122 and the reference region 120 in order to prevent interactions in areas existing at the outside of the favorable part of the free magnetic region 124. Thus, tunnels along arbitrary axes of the free region are also restricted similarly in order to restrict the tunnel at the favorable part which although exists at the arbitrary position of the free region.

公开(公告)号：DE60237476D1

公开(公告)日：2010-10-07

申请号：DE60237476

申请日：2002-11-15

Applicant: IBM

Inventor： ABRAHAM DAVID WILLIAM ,  TROUILLOUD PHILIP LOUIS

IPC: G11C11/15 ,  G11C11/18 ,  G11C7/02 ,  G11C7/04 ,  G11C11/00 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

公开(公告)号：DE69903206T2

公开(公告)日：2003-07-10

申请号：DE69903206

申请日：1999-01-20

Applicant: IBM

Inventor： ABRAHAM DAVID WILLIAM ,  GALLAGHER WILLIAM JOSEPH ,  TROUILLOUD PHILIP LOUIS

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

Abstract: Magnetic memory devices are disclosed having multiple magnetic tunnel junctions therein writable together into an average state. For example, a magnetic random access memory ("MRAM") array is disclosed having respective pluralities of crossing first and second electrically conductive lines forming a plurality of intersecting regions across the array. The array includes a plurality of magnetic memory cells, each disposed at a respective one of the plurality of intersecting regions. Each cell includes at least two magnetic tunnel junctions therein, writable together into an average state, according to electrical and resultant magnetic stimuli applied thereto via a respective first and second conductive line. The at least two magnetic tunnel junctions provided in each magnetic memory cell provide a predictable magnetic response for all cells across the array. Only the cell at an intersecting region selected by stimuli applied via each of the first and second electrically conductive lines forming the selected region is written, and other cells along the first and second electrically conductive lines forming the selected region are not written. An operating window of applied electrical and therefore magnetic stimuli can be defined to ensure cell selectivity across the memory array.