公开(公告)号：JP2002185308A

公开(公告)日：2002-06-28

申请号：JP2001326092

申请日：2001-10-24

Applicant: IBM

Inventor： KARTSCHOKE PAUL D ,  ROHRER NORMAN J

IPC: H03K19/20 ,  H03K3/356 ,  H03K19/00 ,  H03K19/096

Abstract: PROBLEM TO BE SOLVED: To provide a circuit and method which decrease a DC power consumption amount of a clock type ratio digital logic circuit. SOLUTION: This circuit analyzes a voltage transition of a ratio digital logic circuit 160, and a switching circuit 150 controls a DC current which flows in the entire circuit based on the transition. By adjusting the DC current flowing in the digital logic circuit, a hot electronic action which puts an obstacle in the digital circuit and problematic harmful influences of electric movement are decreased. This circuit and method are exemplified by a ratio logic NOR function which utilizes a MOSFET technique.

公开(公告)号：JP2006024330A

公开(公告)日：2006-01-26

申请号：JP2004203670

申请日：2004-07-09

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： FIFIELD JOHN A ,  KARTSCHOKE PAUL D ,  KLAASEN WILLIAM A ,  KOSONOCKY STEPHEN V ,  RANDY W MANN ,  OPPOLD JEFFERY H ,  ROHRER NORMAN J

IPC: G11C11/41 ,  G01T1/17 ,  G11C29/04 ,  H01L21/8238 ,  H01L27/092

Abstract: PROBLEM TO BE SOLVED: To provide a detection circuit and a method for detecting silicon well voltage or current indicating collision of an alpha particle or a cosmic ray to the silicon well in silicon substrate.
SOLUTION: An effective application of the detection circuit is use in redundancy repair latches used for an SRAM. In the redundancy repair latches, normally writing is once performed when power is on in order to register wrong latch data, though writing is not performed again usually. When either state of these latches is altered by SER phenomena (soft error rate: collision of the alpha particle or the cosmic ray, and the like), the recovery data for the redundant latch of the SRAM is mapped incorrectly. In this detection circuit and the method, whether the SER phenomenon occurs in these latches is monitored, when occurring, reloading the recovery data is performed to the redundancy repair latches.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供检测电路和检测硅阱电压或电流的方法，所述硅阱电压或电流指示α粒子或宇宙射线与硅衬底中的硅阱的碰撞。

解决方案：检测电路的有效应用是用于SRAM的冗余修复锁存器中。 在冗余修复锁存器中，通常只有在通电时才进行写入操作，才能注册错误的锁存器数据，但通常不会再写入。 当这些锁存器的任一状态被SER现象（软错误率：α粒子或宇宙射线的碰撞等）改变时，SRAM的冗余锁存器的恢复数据被映射不正确。 在该检测电路和方法中，监视这些锁存器中是否发生SER现象，发生时，对冗余修复锁存器进行恢复数据的重新加载。 版权所有（C）2006，JPO＆NCIPI