公开(公告)号：SG65024A1

公开(公告)日：1999-05-25

申请号：SG1997003669

申请日：1997-10-06

Applicant: IBM

Inventor： COONEY EDWARD C III ,  LEE HYUN K ,  MCDEVITT THOMAS L ,  STAMPER ANTHONY K

IPC: H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/56

Abstract: Method of improving the resistance of a metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine-barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures. The invention also covers integrated circuit structures made by this method.

公开(公告)号：MY127478A

公开(公告)日：2006-12-29

申请号：MYPI9704675

申请日：1997-10-06

Applicant: IBM

Inventor： COONEY EDWARD C ,  LEE HYUN K ,  MCDEVITT THOMAS L ,  STAMPER ANTHONY K

IPC: H05K1/00 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

Abstract: METHOD OF IMPROVING THE RESISTANCE OF A METAL AGAINST DEGRADATION FROM EXPOSURE TO FLUORINE RELEASED FROM A FLUORINE- CONTAINING MATERIAL BY FORMING A FLUORINE-BARRIER LAYER BETWEEN THE INSULATOR MATERIAL AND THE METAL. THE INVENTION IS ESPECIALLY USEFUL IN IMPROVING CORROSION AND POISONING RESISTANCE OF METALLURGY, SUCH AS ALUMINUM METALLURGY, IN SEMICONDUCTOR STRUCTURES. THE INVENTION ALSO COVERS INTEGRATED CIRCUIT STRUCTURES MADE BY THIS METHOD. (FIG. 2F)