公开(公告)号：JPH11284065A

公开(公告)日：1999-10-15

申请号：JP29372098

申请日：1998-10-15

Applicant: IBM

Inventor： CHU JACK OON ,  ISMAIL KHALID EZZELDIN ,  LEE KIM YANG ,  OTT JOHN ALBRECHT

IPC: H01L21/762 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/08 ,  H01L27/092 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To form buried oxide regions below regions of a single crystal semiconductor layer, by selecting a single crystal Si substrate, and forming a first SiGe epitaxial layer having a const. or gradient and first oxidation rate on the top face of the substrate. SOLUTION: A single crystal Si or SiGe substrate is selected, a first Si1-x Gex or (Si1-x Gex )a C1-a epitaxial layer 16 having a const. or gradient is formed on the top face 15 of the substrate 14 and has a first oxidation rate at specified temp. and ambient condition. The ambient condition includes O, water vapor or HCl or both. The const. or gradient compsn. of the epitaxial layer 16 needs the epitaxial growth, even if the lattice consts. of the layers 14 and 16 differ, and is selected so as to have the first oxidation rate.

公开(公告)号：JPH1093151A

公开(公告)日：1998-04-10

申请号：JP22490897

申请日：1997-08-21

Applicant: IBM

Inventor： CHU JACK OON ,  ISMAIL KHALID EZZELDIN ,  LEE KIM YANG

IPC: H01L39/22 ,  H01L29/161 ,  H01L29/165 ,  H01L29/80 ,  H01L39/02 ,  H01L39/12 ,  H01L39/24

Abstract: PROBLEM TO BE SOLVED: To provide a superconducting structure, having a gate conformed with the conventional Si technology which enables or invalidate the superconduction state by changing the gate voltage to change the electron-to-hole ratio. SOLUTION: A structure which allows superconducting current to flow comprises a substrate, a first epitaxial p-type semiconductor layer 24 subjected to a compression strain for transferring 12, 14, 20 holes, a second epitaxial barrier layer 30 on the first layer, and a third epitaxial n-type semiconductor layer 32 subjected to a tensile strain for transferring electrons. The barrier layer 30 has sufficient thickness to limit the recombination of electrons but is sufficiently thin to form electron-hole pairs, due to the attraction between the electron and hole. The first and second layers has SiGe, e.g. Si1-x Gex , where x=0.6-0.8 for the first layer and x=0.3-0.4 for the second layer and third layer has Si.

公开(公告)号：AT297055T

公开(公告)日：2005-06-15

申请号：AT97305987

申请日：1997-08-06

Applicant: IBM

Inventor： CHU JACK OON ,  ISMAIL KHALID EZZELDIN ,  LEE KIM YANG

IPC: H01L39/22 ,  H01L29/161 ,  H01L29/165 ,  H01L29/80 ,  H01L39/02 ,  H01L39/12 ,  H01L39/24 ,  H01L39/00

Abstract: A structure based on strained Si/SiGe that has high temperature superconductivity is disclosed. The structure for carrying superconducting current includes a substrate (12); a first epitaxial P type semiconductor layer (14), which is under compressive strain, for transporting holes; a second epitaxial barrier layer (20) positioned on the first layer (14); and a third epitaxial N type semiconductor layer (24), which is under tensile strain, for transporting electrons. The barrier layer (30) is thick enough to restrict recombination of electrons and holes, yet the barrier layer (30) is thin enough to permit coulomb force attraction between the electrons and holes to form electron-hole pairs. The first and second layers (14,20) include SiGe, such as Si1.xGex, where x is 0.6-0.8 for the first layer (14), and 0.3-0.4 for the second layer (20). The third layer (24) includes Si.

公开(公告)号：DE69733389T2

公开(公告)日：2006-04-27

申请号：DE69733389

申请日：1997-08-06

Applicant: IBM

Inventor： CHU JACK OON ,  ISMAIL KHALID EZZELDIN ,  LEE KIM YANG

IPC: H01L29/165 ,  H01L39/22 ,  H01L29/161 ,  H01L29/80 ,  H01L39/00 ,  H01L39/02 ,  H01L39/12 ,  H01L39/24

Abstract: A structure based on strained Si/SiGe that has high temperature superconductivity is disclosed. The structure for carrying superconducting current includes a substrate (12); a first epitaxial P type semiconductor layer (14), which is under compressive strain, for transporting holes; a second epitaxial barrier layer (20) positioned on the first layer (14); and a third epitaxial N type semiconductor layer (24), which is under tensile strain, for transporting electrons. The barrier layer (30) is thick enough to restrict recombination of electrons and holes, yet the barrier layer (30) is thin enough to permit coulomb force attraction between the electrons and holes to form electron-hole pairs. The first and second layers (14,20) include SiGe, such as Si1.xGex, where x is 0.6-0.8 for the first layer (14), and 0.3-0.4 for the second layer (20). The third layer (24) includes Si.

公开(公告)号：SG67564A1

公开(公告)日：1999-09-21

申请号：SG1998003955

申请日：1998-10-01

Applicant: IBM

Inventor： CHU JACK OON ,  ISMAIL KHALID EZZELDIN ,  LEE KIM YANG ,  OTT JOHN ALBRECHT

IPC: H01L21/762 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/08 ,  H01L27/092 ,  H01L27/108 ,  H01L21/84

Abstract: A method is provided for forming buried oxide regions 33, 34 below a single crystal semiconductor layer incorporating the steps of forming epitaxial layers 16, 20 having different rates of oxidation with the lower layer having a faster rate of oxidation and oxidizing the layers through an opening in a mask. A plurality of oxide isolated FETs may be formed. This approach reduces the problem of source/drain parasitic capacitance and short channel effects while isolating FETs and eliminating floating body effects of FET by selectively oxidizing semiconductor layers.

公开(公告)号：DE69733389D1

公开(公告)日：2005-07-07

申请号：DE69733389

申请日：1997-08-06

Applicant: IBM

Inventor： CHU JACK OON ,  ISMAIL KHALID EZZELDIN ,  LEE KIM YANG

IPC: H01L39/22 ,  H01L29/161 ,  H01L29/165 ,  H01L29/80 ,  H01L39/02 ,  H01L39/12 ,  H01L39/24 ,  H01L39/00

Abstract: A structure based on strained Si/SiGe that has high temperature superconductivity is disclosed. The structure for carrying superconducting current includes a substrate (12); a first epitaxial P type semiconductor layer (14), which is under compressive strain, for transporting holes; a second epitaxial barrier layer (20) positioned on the first layer (14); and a third epitaxial N type semiconductor layer (24), which is under tensile strain, for transporting electrons. The barrier layer (30) is thick enough to restrict recombination of electrons and holes, yet the barrier layer (30) is thin enough to permit coulomb force attraction between the electrons and holes to form electron-hole pairs. The first and second layers (14,20) include SiGe, such as Si1.xGex, where x is 0.6-0.8 for the first layer (14), and 0.3-0.4 for the second layer (20). The third layer (24) includes Si.