公开(公告)号：JPH10321868A

公开(公告)日：1998-12-04

申请号：JP9131998

申请日：1998-04-03

Applicant: IBM

Inventor： MATTHEW J RATTEN ,  VOLDMAN STEVEN H

IPC: H01L21/768 ,  H01L21/336 ,  H01L21/84 ,  H01L23/52 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a SOI semiconductor device, including a conductive stud for connecting a bulk active device and a SOI(silicon-on-insulator) device with each other. SOLUTION: Substrates 20, 23 are isolated by an embedded insulating layer 22, and there are injected substances for source and drain of the opposite polarities on layer regions 24, 25. An electrical connection 26 is partly isolated by an insulator 27 and an upper insulator 28. A region 21 is made of an injected substance of the same polarity or of opposite polarity to that of the bulk substrate 20. In the case where the dopants of the regions 23, 21, 20 have the same polarity, a SOI MOSFET body is a bulk contact or a thermal joint, and functions as a SOI MOSFET body contact. In the case where the dopants of the regions 23, 21 have the same polarity while the dopant of the region 20 has the opposite polarity, the SOI MOSFET body and the region 21 form a diode for the bulk substrate, which can be used for the polarity of the dopant used, for an example, in circuit application, voltage clamp, ESD(electrostatic discharge) protection, and other circuit functions.