公开(公告)号：JPS61215300A

公开(公告)日：1986-09-25

申请号：JP28320685

申请日：1985-12-18

Applicant: IBM

Inventor： HOVEL HAROLD J ,  MCKOY THERMON E

IPC: C30B31/06 ,  C30B29/40 ,  C30B31/02 ,  H01L21/223 ,  H01L21/225

公开(公告)号：CA1217880A

公开(公告)日：1987-02-10

申请号：CA499174

申请日：1986-01-08

Applicant: IBM

Inventor： HOVEL HAROLD J ,  MCKOY THERMON E

IPC: C30B31/06 ,  C30B29/40 ,  C30B31/02 ,  H01L21/223 ,  H01L21/225

Abstract: PROCESS FOR DIFFUSING IMPURITIES INTO A SEMICONDUCTOR BODY A process for diffusing a dopant into a III-V type semiconductor body is disclosed which comprises: a) placing in a heating chamber which is substantially devoid of any oxidizing substance a deposition substrate possessing a dopant-containing layer which has been vapor deposited upon a major surface thereof in contact with, or in the proximity of, an object substrate fabricated from a III-V type semiconductor material with the dopant-containing layer of the deposition substrate being substantially opposed to a major surface of the object substrate; b) introducing into the heating chamber a source of Group V element corresponding to the Group V element of the object substrate, said source being capable of providing Group V element in the vapor phase at the diffusion temperature with the vapor pressure of the vapor phase Group V element being at or above the equilibrium vapor pressure of the Group V element present at the surface of the object substrate; and, c) heating the deposition substrate and the object substrate to the diffusion temperature for a period of time sufficient to diffuse a predetermined amount of dopant into the object substrate to a predetermined depth therein.