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    Medium dosage simox over wide box thickness range by a plurality of implants and a plurality of annealing processes
    3.
    发明专利
    Medium dosage simox over wide box thickness range by a plurality of implants and a plurality of annealing processes 审中-公开
    中等剂量SIMOX通过多种植入物和多种退火工艺在宽箱体厚度范围内

    公开(公告)号：JP2003309254A

    公开(公告)日：2003-10-31

    申请号：JP2003103083

    申请日：2003-04-07

    Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

    Inventor： HOVEL HAROLD J ,  NORCOTT MAURICE H ,  SADANA DEVENDRA K

    IPC: H01L21/265 ,  H01L21/02 ,  H01L21/762 ,  H01L27/12

    CPC classification number: H01L21/76243

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-quality silicon-on- insulator (SOI) substrate material having a buried oxide (BOX) region whose thickness is about 300 nm or less.
    SOLUTION: In this method, a high quality SOI substrate is formed by using a plurality of implants and a plurality of annealing steps. Particularly, this method includes at least a first oxygen ion implant wherein a primary oxide seed region is formed, a first annealing step, a second oxygen ion implant wherein a BOX adjustment oxide seed region is formed, and a second annealing step. In the annealing step, the seed region is converted into an embedded oxide region.
    COPYRIGHT: (C)2004,JPO

    Abstract translation: 要解决的问题：提供一种制造具有厚度为约300nm以下的掩埋氧化物（BOX）区域的高品质绝缘硅（SOI）衬底材料的方法。 解决方案：在该方法中，通过使用多个注入和多个退火步骤形成高质量的SOI衬底。 特别地，该方法至少包括其中形成主氧化物种子区域的第一氧离子注入，第一退火步骤，其中形成BOX调整氧化物种子区域的第二氧离子注入和第二退火步骤。 在退火步骤中，种子区域被转换为嵌入的氧化物区域。 版权所有（C）2004，JPO

    PHOTOELECTRICAL CONVERTER
    5.
    发明专利
    PHOTOELECTRICAL CONVERTER 未知

    公开(公告)号：CA1088189A

    公开(公告)日：1980-10-21

    申请号：CA287548

    申请日：1977-09-26

    Applicant: IBM

    Inventor： BLAKESLEE A EUGENE ,  HOVEL HAROLD J

    IPC: H01L31/10 ,  H01L31/042 ,  H01L31/052 ,  H01L31/04

    Abstract: PHOTOELECTRICAL CONVERTER A photoresponsive device for the photoelectrical conversion of energy is formed in a device body which has first and second major parallel opposed surfaces. A photoresponsive active region of semiconductor material is formed along one major surface and a thermally absorbing member is bonded to the other major surface. A region of electrically insulating material is provided which is epitaxial with the photoresponsive active region and separates the active region from the second major surface.

    SILICON SOLAR CELL
    6.
    发明专利
    SILICON SOLAR CELL 未知

    公开(公告)号：CA1141455A

    公开(公告)日：1983-02-15

    申请号：CA340238

    申请日：1979-11-20

    Applicant: IBM

    Inventor： HOVEL HAROLD J

    IPC: H01L31/18 ,  H01L31/068 ,  H01L31/04

    Abstract: SILICON SOLAR CELL A high efficiency silicon solar cell may be constructed by providing a two-stage emitter with a 1 micron thickness on a base region with a back surface field. The stage of the emitter adjacent to the junction is moderately doped to minimize bandgap shrinkage and to maximize carrier lifetime while the stage of the emitter adjacent the surface is highly doped to minimize sheet resistance. An aiding drift field may be added to both the emitter and base regions. The full size of the base is less than an effective diffusion length. A back surface field is provided adjacent the ohmic contact on the part of the base remote from the junction. YO978-013

    PROCESS FOR DIFFUSING IMPURITIES INTO A SEMICONDUCTOR BODY
    8.
    发明专利
    PROCESS FOR DIFFUSING IMPURITIES INTO A SEMICONDUCTOR BODY 未知

    公开(公告)号：CA1217880A

    公开(公告)日：1987-02-10

    申请号：CA499174

    申请日：1986-01-08

    Applicant: IBM

    Inventor： HOVEL HAROLD J ,  MCKOY THERMON E

    IPC: C30B31/06 ,  C30B29/40 ,  C30B31/02 ,  H01L21/223 ,  H01L21/225

    Abstract: PROCESS FOR DIFFUSING IMPURITIES INTO A SEMICONDUCTOR BODY A process for diffusing a dopant into a III-V type semiconductor body is disclosed which comprises: a) placing in a heating chamber which is substantially devoid of any oxidizing substance a deposition substrate possessing a dopant-containing layer which has been vapor deposited upon a major surface thereof in contact with, or in the proximity of, an object substrate fabricated from a III-V type semiconductor material with the dopant-containing layer of the deposition substrate being substantially opposed to a major surface of the object substrate; b) introducing into the heating chamber a source of Group V element corresponding to the Group V element of the object substrate, said source being capable of providing Group V element in the vapor phase at the diffusion temperature with the vapor pressure of the vapor phase Group V element being at or above the equilibrium vapor pressure of the Group V element present at the surface of the object substrate; and, c) heating the deposition substrate and the object substrate to the diffusion temperature for a period of time sufficient to diffuse a predetermined amount of dopant into the object substrate to a predetermined depth therein.

    SEMICONDUCTOR DEVICE FABRICATION
    9.
    发明专利
    SEMICONDUCTOR DEVICE FABRICATION 未知

    公开(公告)号：CA1155970A

    公开(公告)日：1983-10-25

    申请号：CA358895

    申请日：1980-08-25

    Applicant: IBM

    Inventor： HOVEL HAROLD J ,  WOODALL JERRY M

    IPC: H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L29/45 ,  H01L29/47 ,  H01L29/80 ,  H01L29/812 ,  H01L29/872 ,  H01L21/20 ,  H01L29/12

    Abstract: Semiconductor devices can be fabricated using as an intermediate manufacturing structure a substrate of one semiconductor with a thin epitaxial surface layer of a different semiconductor with properties such that the semiconductors each have different solubilities with respect to a metal. When a vertical differentiation is used to expose the different materials and the metal is deposited on both and heated, the metal will form a Schottky barrier in one material and an ohmic contact in the other. Where the substrate is gallium arsenide and the epitaxial layer is gallium aluminum arsenide and the metal is tin, a self-aligned gallium arsenide MESFET is formed wherein the tin forms ohmic contacts with the gallium arsenide and a Schottky barrier contact with the gallium aluminum arsenide.

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