公开(公告)号：DE69222824D1

公开(公告)日：1997-11-27

申请号：DE69222824

申请日：1992-08-19

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  BRAREN BODIL E ,  DAIJAVAD SHAHROKH ,  HODGSON RODNEY T ,  MOLIS STEVEN E ,  VIEHBECK ALFRED

IPC: C08K3/04 ,  C08K9/02 ,  H05K1/03 ,  H05K3/10 ,  C08L79/08

公开(公告)号：SG155831A1

公开(公告)日：2009-10-29

申请号：SG2009007931

申请日：2009-02-04

Applicant: CHARTERED SEMICONDUCTOR MFG ,  SAMSUNG ELECTRONICS CO LTD ,  IBM

Inventor： WIDODO JOHNNY ,  HAK KIM JAE ,  BONILLA GRISELDA ,  MOLIS STEVEN E ,  RESTAINO DARRYL D ,  SHOBHA HOSADURGA K

Abstract: Methods of forming devices include forming a first electrically insulating layer having a metal interconnection therein, on a substrate and then forming a first electrically insulating barrier layer on an upper surface of the metal interconnection and on the first electrically insulating layer. The first electrically insulating barrier layer is exposed to a plasma that penetrates the first electrically insulating barrier and removes oxygen from an upper surface of the metal interconnection. The barrier layer may have a thickness in a range from about 5 A to about 50 A and the plasma may be a hydrogen-containing plasma that converts oxygen on the upper surface of the metal interconnection to water.