公开(公告)号：US6432829B2

公开(公告)日：2002-08-13

申请号：US80147301

申请日：2001-03-08

Applicant: IBM

Inventor： MULLER K PAUL L ,  NOWAK EDWARD J ,  WONG HON-SUM P

IPC: H01L21/336 ,  H01L29/786 ,  H01L21/302

CPC classification number: H01L29/785 ,  H01L29/66795 ,  H01L29/78636 ,  H01L29/78654

Abstract: An improved fin device used as the body of a field effect transistor ("FET") and an improved process of making the fin device. The fin device allows for the fabrication of very small dimensioned metal-oxide semiconductor ("MOS") FETs in the size range of micrometers to nanometers, while avoiding the typical short channel effects often associated with MOSFETs of these dimensions. Accordingly, higher density MOSFETs may be fabricated such that more devices may be placed on a single semiconductor wafer. The process of making the fin device results in an improved fully planarized device.

Abstract translation: 用作场效应晶体管（“FET”）的主体的改进的鳍装置以及制造鳍片装置的改进方法。 翅片器件允许制造尺寸范围为微米至纳米的非常小尺寸的金属氧化物半导体（“MOS”）FET，同时避免通常与这些尺寸的MOSFET相关的典型的短沟道效应。 因此，可以制造更高密度的MOSFET，使得可以在单个半导体晶片上放置更多的器件。 制造翅片装置的过程导致改进的完全平坦化的装置。