公开(公告)号：SE338594B

公开(公告)日：1971-09-13

申请号：SE697068

申请日：1968-05-22

Applicant: IBM

Inventor： MCGRODDY J ,  NATHAN M

IPC: H01L47/00 ,  H03B9/12 ,  H03B7/00

Abstract: 1,217,522. Semi-conductor oscillators. INTERNATIONAL BUSINESS MACHINES CORP. 4 April, 1968 [14 Aug., 1967], No. 16232/68. Heading H3T. [Also in Division H1] An oscillator uses a body of a semiconductor material which at least in certain crystallographic directions has the drift velocity applied field relationship shown. In the embodiment the body is of germanium doped with antimony or bismuth and is provided with two non- injecting contacts such that the field is applied in a (100) direction. The contacts are of soldered or alloy type and include diffused or alloyed terminal regions of the same conductivity type as the centre of the body. To obtain oscillations the voltage applied to the two contacts must exceed a threshold voltage v 1 ; above this threshold oscillations categorized as Type I occur until a voltage v 2 is reached when they cease. Type II oscillations occur in a higher voltage range v 3 upwards, the upper limit of this range being made less than the voltage which produces avalanche breakdown of the body. For many devices v 2 = V 3 . Within the lower part of the range v 1 -v 2 the frequency increases slightly with voltage; at a certain point it jumps by a factor of about 2 and then again, in the upper part of the range, increases slightly with voltage. With some of the devices the v 1 -v 2 range is split into three parts: high v; low v; high v. The Type IT oscillations, which occur at roughly a tenth of the frequency of the Type I oscillations, are believed to arise from a minority carrier mechanism involving periodic local avalanching (resulting from impact ionization) but not total breakdown. Type II operation is favoured by using lower temperatures. At very low temperatures and at voltage above v 1 a crystal length-dependent Type III oscillation may occur which involves a domain propagation mode which, like the other modes, is not, however, thought to involve an inter-valley transfer mechanism. The preferred geometry for Type I operation is described by Fig. 11A (not shown) and that for Type II operation by Fig. 11B (not shown). The shape of Fig. 11C (not shown) allows Type I oscillation to take place at a lower v 1 than for an otherwise similar uniform body but leads to a lower amplitude of oscillation and polarity dependant operation. The oscillators may have resistive or reactive loads; the latter may be tuned and though shown in Fig. 1A as comprising discrete components may instead be a cavity or waveguide completely or partially containing the semiconductor device to which it is electromagnetically coupled. Tests show that the oscillations are pressure-dependant, through this fact is not made use of in operation of the embodiments.

公开(公告)号：SE315348B

公开(公告)日：1969-09-29

申请号：SE1130063D

申请日：1963-10-15

Applicant: IBM

Inventor： BURNS G ,  LASHER G ,  NATHAN M ,  DILL F ,  DUMKE W

IPC: H01S5/024 ,  H01S5/18 ,  H01S5/32 ,  H01S3/18

Abstract: 1,045,478. Semi-conductor lasers. INTERNATIONAL BUSINESS MACHINES CORPORATION. Oct. 14, 1963 [Oct. 15, 1962], No. 40363/63. Heading H1K. [Also in Division H3] Charge carriers are injected into a body of direct band gap material at a rate sufficient to stimulate emission of radiation due to recombination of the carriers. A semi-conductor body consists of GaAs with a PN junction formed by diffusion between zinc and tellurium doped regions. A gold and antimony plated washer is attached to one side of the device and an indium contact is applied to the other side. The device is operated at low temperatures, e.g. 25‹ K or 77‹ K. Details of many such devices, and their performance, are given in the Specification, together with several modifications. In one device, cadmium replaces zinc as a dopant, a nickel washer soldered with tin being used as one contact, and an InGaAs alloy as the other. A second device uses a gold-plated MoHg washer as one contact and tin or evaporated gold as the other. A further device is undoped on one side of the junction. Other suitable semi-conductor materials include GaSb, InSb, InP, InAs and GaAs-GaP alloys. Charge carrier injection may be achieved by using a magnetic rectifier structure or a semi-conductor-metal junction instead of a PN junction.