公开(公告)号：US3780359A

公开(公告)日：1973-12-18

申请号：US3780359D

申请日：1971-12-20

Applicant: IBM

Inventor： DUMKE W ,  RIDEOUT V ,  WOODALL J

IPC: H01L21/66 ,  H01L21/306 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737 ,  H01L3/20 ,  H01L9/12

CPC classification number: H01L29/7371 ,  H01L21/30612 ,  Y10S148/051 ,  Y10S148/072 ,  Y10S148/107

Abstract: An improved heterojunction transistor and a method of fabricating the same is provided. The device is comprised of liquid phase epitaxially grown binary compound layers of group IIIA-VB semiconductor materials which serve as collector and base regions and of a ternary compound layer of group IIIA-VB semiconductor material which serves as the heterojunction emitter.

Abstract translation: 提供了一种改进的异质结晶体管及其制造方法。 该装置由用作集电极和基极区域的IIIA-VB族半导体材料的液相外延生长二元化合物层和用作异质结发射体的IIIA-VB族半导体材料的三元化合物层组成。

公开(公告)号：SE330739B

公开(公告)日：1970-11-30

申请号：SE1192163

申请日：1963-10-30

Applicant: IBM

Inventor： DUMKE W ,  HAERING R

IPC: H01S5/32 ,  H01S3/18

公开(公告)号：SE315348B

公开(公告)日：1969-09-29

申请号：SE1130063D

申请日：1963-10-15

Applicant: IBM

Inventor： BURNS G ,  LASHER G ,  NATHAN M ,  DILL F ,  DUMKE W

IPC: H01S5/024 ,  H01S5/18 ,  H01S5/32 ,  H01S3/18

Abstract: 1,045,478. Semi-conductor lasers. INTERNATIONAL BUSINESS MACHINES CORPORATION. Oct. 14, 1963 [Oct. 15, 1962], No. 40363/63. Heading H1K. [Also in Division H3] Charge carriers are injected into a body of direct band gap material at a rate sufficient to stimulate emission of radiation due to recombination of the carriers. A semi-conductor body consists of GaAs with a PN junction formed by diffusion between zinc and tellurium doped regions. A gold and antimony plated washer is attached to one side of the device and an indium contact is applied to the other side. The device is operated at low temperatures, e.g. 25‹ K or 77‹ K. Details of many such devices, and their performance, are given in the Specification, together with several modifications. In one device, cadmium replaces zinc as a dopant, a nickel washer soldered with tin being used as one contact, and an InGaAs alloy as the other. A second device uses a gold-plated MoHg washer as one contact and tin or evaporated gold as the other. A further device is undoped on one side of the junction. Other suitable semi-conductor materials include GaSb, InSb, InP, InAs and GaAs-GaP alloys. Charge carrier injection may be achieved by using a magnetic rectifier structure or a semi-conductor-metal junction instead of a PN junction.