公开(公告)号：CA1335955C

公开(公告)日：1995-06-20

申请号：CA595451

申请日：1989-03-31

Applicant: IBM

Inventor： GALLAGHER WILLIAM J ,  GIESS EDWARD A ,  GUPTA ARUNAVA ,  LAIBOWITZ ROBERT B ,  O'SULLIVAN EUGENE J M ,  SANDSTROM ROBERT L

IPC: C01G3/00 ,  C01B13/14 ,  C01G1/00 ,  C04B41/89 ,  C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L39/14 ,  H01L39/22 ,  H01L39/24 ,  H01P3/08 ,  H01L39/12

Abstract: High Tc oxide superconductive films can be formed on gallate layers, where the gallate layers include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high Tc superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and T1-based systems.