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    NONVOLATILE MAGNETIC MEMORY CELL AND DEVICE
    1.
    发明专利
    NONVOLATILE MAGNETIC MEMORY CELL AND DEVICE 失效

    公开(公告)号：JP2000082791A

    公开(公告)日：2000-03-21

    申请号：JP19853299

    申请日：1999-07-13

    Applicant: IBM

    Inventor： GUPTA ARUNAVA ,  RAJIVI V JOSHI

    IPC: G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01F10/06 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/22 ,  H01L43/08

    Abstract: PROBLEM TO BE SOLVED: To enhance the characteristics of a magnetic tunnel junction cell structure and a memory device architecture by providing a first and second ferromagnetic layers and an insulating layer for forming a magnetic tunnel junction element between the first and second ferromagnetic layers. SOLUTION: A magnetic tunnel junction(MTJ) cell comprises an MTJ element 200 of multiplayer structure having a first and second FM layers 302, 304 and insulating layers 306, 308, 310 interposed between them. The MTJ cell further comprises a first conductor segment 206 extending below the MTJ element 200 in a first direction and a second conductor segment 208 extending above the MTJ element 200 in a second direction orthogonal to the first direction. The first conductor segment 206 terminates with first capacitive structure and the second conductor segment 208 terminates with second capacitive structure. A common input terminals are formed by connecting these conductor segments.

    FORMATION OF SEMICONDUCTOR STRUCTURE ON HOST SUBSTRATE AND SEMICONDUCTOR STRUCTURE
    2.
    发明专利
    FORMATION OF SEMICONDUCTOR STRUCTURE ON HOST SUBSTRATE AND SEMICONDUCTOR STRUCTURE 失效

    公开(公告)号：JP2000252224A

    公开(公告)日：2000-09-14

    申请号：JP2000047152

    申请日：2000-02-24

    Applicant: IBM

    Inventor： NESTOR A BOJAATSUAKU ,  SUPURATEIKU GUUHA ,  GUPTA ARUNAVA

    IPC: H01L21/205 ,  H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing substantially a single crystal or polycrystal semiconductor structure on a host substrate at a low cost. SOLUTION: First, a layer made of nitride material with a wide band gap such as gallium nitride, aluminum nitride, indium nitride, etc., is adhered to a sapphire substrate 11. Next, a silicon structure 16 is grown on the nitride layer. A host substrate 18 is bonded to the exposed surface area of the semiconductor structure by a bonding agent. Then the sapphire substrate is lifted off through a metallization procedure for releasing a nitrogen from gallium, aluminum or indium.

    GROUP III METAL NITRIDE FILM AS PHASE TRANSITION MEDIUM FOR OPTICAL RECORDING
    3.
    发明专利
    GROUP III METAL NITRIDE FILM AS PHASE TRANSITION MEDIUM FOR OPTICAL RECORDING 失效

    公开(公告)号：JPH11120615A

    公开(公告)日：1999-04-30

    申请号：JP17430998

    申请日：1998-06-22

    Applicant: IBM

    Inventor： BOJARCZUK JR NESTOR ALEXANDER ,  GUHA SUPRATIK ,  GUPTA ARUNAVA ,  TANG WADE WAI-CHUNG

    IPC: B41M5/26 ,  G11B7/00 ,  G11B7/004 ,  G11B7/0045 ,  G11B7/005 ,  G11B7/24 ,  G11B7/243 ,  G11B7/253

    Abstract: PROBLEM TO BE SOLVED: To provide a phase transition medium for optical recording by preparing a metal compsn. selected from group III metals for a metal nitride thin film. SOLUTION: This phase transition type medium for optical recording is based on a semiconductor comprising group III metal nitrides such as AlN, InN and GaN. By irradiating the surface of this thin film of a semiconductor having a wide band gap with photons of energy equal to or higher than the band gap of the material with higher output density than the threshold, nitrogen is desorbed to form a metal coating. Once nitrogen is desorbed, the metal phase written on the medium can not return to a nitride phase, and this stabilizes the medium as a write-once system. The band gap when a group III metal nitride alloy is used is continuously varied and controlled by changing the relative ratio of III group metals so that the alloy melts by laser having the photon energy laser in the above range. Thus, the material can be used for the format of plural recording layers with low absorbance and high transmittance when proper recording wavelength is used for the initial phase.

    FABRICATION OF PATTERNED LINES OF HIGH T -SUPERCONDUCTORS
    8.
    发明专利
    FABRICATION OF PATTERNED LINES OF HIGH T -SUPERCONDUCTORS 未知

    公开(公告)号：CA1335438C

    公开(公告)日：1995-05-02

    申请号：CA575255

    申请日：1988-08-19

    Applicant: IBM

    Inventor： GUPTA ARUNAVA

    IPC: C01B13/32 ,  C01G1/00 ,  C01G3/00 ,  C04B41/87 ,  H01B12/06 ,  H01B13/00 ,  H01L21/027 ,  H01L21/84 ,  H01L39/24

    Abstract: A method for producing a patterned layer of high Tc oxide superconductor is provided in which patterning is accomplished prior to the attainment of a superconducting state in the layer. A solution containing precursor components of the desired oxide superconductor is sprayed onto a substrate and dried to provide a layer thereon. This layer is then irradiated in selected areas to convert the irradiated layers to an intermediate oxide state, the nonirradiated areas being unchanged. The nonirradiated areas are then dissolved away, leaving a pattern of oxide material. This oxide material is then converted to a high Tc superconducting state, as by annealing in an oxygen atmosphere. This provides the patterned layer of high Tc oxide superconductor. An example of such a superconductor is a mixed copper oxide, such as Y1Ba2Cu3O7-x.

    10.
    发明专利
    未知

    公开(公告)号：DE68902494D1

    公开(公告)日：1992-09-24

    申请号：DE68902494

    申请日：1989-01-27

    Applicant: IBM

    Inventor： GUPTA ARUNAVA ,  HUSSEY BRAIN W

    IPC: H01L21/60 ,  B23K26/03 ,  B23K26/04 ,  B23K26/00

    Abstract: An optical process monitor primarily for use in laser wire bonding detects the reflectivity change of the wire (12) being bonded in order to provide feedback control of the high power laser (10) used for bonding the wire (12) to a pad (14). The beam of a low power laser (30) which is co-linear or combined with the high power laser beam is conducted to the bond site and reflected from the wire (12) during the bonding cycle. The change in reflectivity of the wire during the bonding cycle is detected from the reflected low power laser beam. A signal commensurate with the detected change of reflectivity is used to control the power or duration of the high power laser (10) during bonding.

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