公开(公告)号：JP2000082791A

公开(公告)日：2000-03-21

申请号：JP19853299

申请日：1999-07-13

Applicant: IBM

Inventor： GUPTA ARUNAVA ,  RAJIVI V JOSHI

IPC: G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01F10/06 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L27/22 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To enhance the characteristics of a magnetic tunnel junction cell structure and a memory device architecture by providing a first and second ferromagnetic layers and an insulating layer for forming a magnetic tunnel junction element between the first and second ferromagnetic layers. SOLUTION: A magnetic tunnel junction(MTJ) cell comprises an MTJ element 200 of multiplayer structure having a first and second FM layers 302, 304 and insulating layers 306, 308, 310 interposed between them. The MTJ cell further comprises a first conductor segment 206 extending below the MTJ element 200 in a first direction and a second conductor segment 208 extending above the MTJ element 200 in a second direction orthogonal to the first direction. The first conductor segment 206 terminates with first capacitive structure and the second conductor segment 208 terminates with second capacitive structure. A common input terminals are formed by connecting these conductor segments.