公开(公告)号：JP2000174025A

公开(公告)日：2000-06-23

申请号：JP29247099

申请日：1999-10-14

Applicant: IBM

Inventor： SAIPUREIN E UZOO ,  STEPHEN H BETCHER ,  PATRICK W DEHABAAN ,  PARKS CHRISTOPHER C ,  SIMON ANDREW H

IPC: H01L21/3205 ,  C25D5/10 ,  C25D7/00 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To provide a high concn. impurity content and a resistance to the crystal grain growth by keeping a substrate in a plating soln. after electrodepositing a Cu-contg. film on a seed layer of the substrate dipped in the plating soln., electrodepositing a Cu-contg. film, and removing and drying the substrate from the plating soln. SOLUTION: A first electrodeposited metal film layer 22 is formed on an exposed region of the top of a metal seed layer 6, an impurity film 26 is laminated on a fine structure contg. a rough surface 24' of the metal film layer 22, this film 26 has a top surface and is composed of a heavy dopant from an electroplating soln., an electrodeposited metal film layer 30 is formed on the impurity film 26. This film 26 gives a heavily doped region which is integrated with a rough surface 24' to give a nature of suppressing the crystal grain growth and the electromigration resistance to composite metal conductive wires 39. Thus it is possible to obtain a superior electric, thermodynamic and metallurgical nature.