公开(公告)号：DE60128883T2

公开(公告)日：2008-02-14

申请号：DE60128883

申请日：2001-12-10

Applicant: IBM

Inventor： GREENBERG DAVID R ,  JADUS DALE K ,  SUBBANNA SESHARDRI ,  WALTER KEITH M

IPC: H01L29/868 ,  H01L21/329

Abstract: The invention provides a PIN diode having a laterally extended I-region (5). The invention also provides a method of fabricating the inventive PIN diode compatible with modern RF technologies such as silicon-germanium BiCMOS processes.

公开(公告)号：DE60128883D1

公开(公告)日：2007-07-26

申请号：DE60128883

申请日：2001-12-10

Applicant: IBM

Inventor： GREENBERG DAVID R ,  JADUS DALE K ,  SUBBANNA SESHARDRI ,  WALTER KEITH M

IPC: H01L29/868 ,  H01L21/329

Abstract: The invention provides a PIN diode having a laterally extended I-region (5). The invention also provides a method of fabricating the inventive PIN diode compatible with modern RF technologies such as silicon-germanium BiCMOS processes.

公开(公告)号：AT364901T

公开(公告)日：2007-07-15

申请号：AT01310302

申请日：2001-12-10

Applicant: IBM

Inventor： GREENBERG DAVID R ,  JADUS DALE K ,  SUBBANNA SESHARDRI ,  WALTER KEITH M

IPC: H01L29/868 ,  H01L21/329

Abstract: The invention provides a PIN diode having a laterally extended I-region (5). The invention also provides a method of fabricating the inventive PIN diode compatible with modern RF technologies such as silicon-germanium BiCMOS processes.