公开(公告)号：DE3271723D1

公开(公告)日：1986-07-24

申请号：DE3271723

申请日：1982-03-04

Applicant: IBM

Inventor： TIEN PAUL CHUNG

IPC: H03K3/354 ,  H03K3/03 ,  H03K3/282

公开(公告)号：DE3278864D1

公开(公告)日：1988-09-08

申请号：DE3278864

申请日：1982-09-22

Applicant: IBM

Inventor： TIEN PAUL CHUNG

IPC: G11C11/402 ,  G11C11/405 ,  G11C11/406 ,  G11C11/4074 ,  G11C11/409 ,  H01L27/10 ,  G11C11/24 ,  H01L27/02

Abstract: Depletion-mode FET (13a of 8) joins to enhancement-mode FET (13b of 8) to store charge capacitively as a memory cell. That enhancement-mode FET (13b of 8) is connected to an FET capacitor (19). When the memory stores a high charge, a refresh clock pulse on a line (21), passes the capacitor (19), turns off enhancement-mode part of joined FETs (8), and is effective to gate refresh switch (25) on. When the memory stores ground, the capacitor (19) is not activated and does not pass the refresh pulses. The memory requires very low power for refresh, and is compact and practical for use in large arrays.

公开(公告)号：DE3278054D1

公开(公告)日：1988-03-03

申请号：DE3278054

申请日：1982-07-23

Applicant: IBM

Inventor： THOMAS DAVID ROSS ,  TIEN PAUL CHUNG

IPC: G11C11/402 ,  G11C11/408 ,  G11C11/24