公开(公告)号：JP2002343762A

公开(公告)日：2002-11-29

申请号：JP2002110323

申请日：2002-04-12

Applicant: IBM

Inventor： TAFT CHARLES J ,  MCCULLOUGH KENNETH J ,  GEORGE F OUIMET ,  RATH DAVID L ,  ZIGNER ROBERT W JR

IPC: H01L21/306 ,  B08B3/00 ,  C11D11/00 ,  G05D21/02 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide a system that minimizes damage in metal feature, and influence due to costs and wastes, and at the same time achieves effective and predictable semiconductor wafer washing. SOLUTION: In the washing apparatus and method of semiconductor wafers, deionized water is set to at least 80%, and a dilute solution is used. In this case, the dilute solution contains oxidizer such as sulfuric acid and hydrogen peroxide water, and a small amount of hydrofluoric acid (HF) of approximately 5 to 12 ppm preferably. An automated system mixes the sulfuric acid, hydrogen peroxide water, and HF, and generates washing liquid having target HF concentration within a preferable range such as 8 ppm. After that, the system maintains HF concentration within a range of approximately 0.5 to 1 ppm from at least target HF concentration.