公开(公告)号：JP2003109431A

公开(公告)日：2003-04-11

申请号：JP2002184636

申请日：2002-06-25

Applicant: IBM

Inventor： JOHN M COTTE ,  MCCULLOUGH KENNETH JOHN ,  MOREAU WAYNE MARTIN ,  PETRARCA KEVIN ,  SIMONS JOHN P ,  TAFT CHARLES J ,  VOLANT RICHARD

IPC: H01B3/30 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a new kind of high polymer material having a lowered dielectric constant, properly applicable to an electric assembly using a small semiconductor element recently developed. SOLUTION: This high polymer material is formed by forcing a polymer having a low dielectric constant into contact with liquid or supercritical carbon dioxide under a thermodynamic condition to maintain the carbon dioxide in a liquid or supercritical state. Thereby, a porous product is formed. Subsequently, the high polymer material having a substantially lowered dielectric constant can be obtained by changing the thermodynamic condition to a working environment wherein the carbon dioxide escapes from fine holes and is replaced with air.

公开(公告)号：JP2004200658A

公开(公告)日：2004-07-15

申请号：JP2003383178

申请日：2003-11-12

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： COTTE JOHN M ,  IVERS CATHERINE ,  MCCULLOUGH KENNETH J ,  MOREAU WAYNE M ,  PURTELL ROBERT J ,  SIMONS JOHN P ,  SYVERSON WILLIAM A ,  TAFT CHARLES J

IPC: H01L21/304 ,  B08B7/00 ,  C25F1/00 ,  H01L21/30 ,  H01L21/302 ,  H01L21/306

CPC classification number: B08B7/0021 ,  H01L21/02063 ,  Y10S134/902

Abstract: PROBLEM TO BE SOLVED: To provide a method and device for removing a solid residual or a liquid residual, or both of them, from an electronic component such as a semiconductor wafer or the like.
SOLUTION: The residual is solidified on the surface of the wafer by the use of liquid or a supercritical carbon dioxide, and then the residual is removed by vaporization from the system. In a favorable embodiment, after the solidifying step and the vaporizing step are repeated (cycled), the CO
2 is removed from a vessel. The residual is removed with the vaporizing carbon dioxide.
COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2002225000A

公开(公告)日：2002-08-13

申请号：JP2001369501

申请日：2001-12-04

Applicant: IBM

Inventor： JOHN MICHAEL COTT ,  MCCULLOUGH KENNETH JOHN ,  MOREAU WAYNE MARTIN ,  SIMONS JOHN P ,  TAFT CHARLES J

IPC: B81C1/00 ,  B05D1/18 ,  B82B3/00 ,  C23C18/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for sticking a thin film to a nanometer structure. SOLUTION: The method is to stick the thin film to the nanometer structure preparing an aerogel material or a coating that can be formed as a metal seed layer. The coating is mixed with a supercritical composition to form a supercritical coating composition. The supercritical coating composition is stuck to the nanometer structure under a supercritical condition. Then the supercritical condition is eliminated and the supercritical composition is removed to solidify the coating into a solid thin film.

公开(公告)号：JP2002343762A

公开(公告)日：2002-11-29

申请号：JP2002110323

申请日：2002-04-12

Applicant: IBM

Inventor： TAFT CHARLES J ,  MCCULLOUGH KENNETH J ,  GEORGE F OUIMET ,  RATH DAVID L ,  ZIGNER ROBERT W JR

IPC: H01L21/306 ,  B08B3/00 ,  C11D11/00 ,  G05D21/02 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide a system that minimizes damage in metal feature, and influence due to costs and wastes, and at the same time achieves effective and predictable semiconductor wafer washing. SOLUTION: In the washing apparatus and method of semiconductor wafers, deionized water is set to at least 80%, and a dilute solution is used. In this case, the dilute solution contains oxidizer such as sulfuric acid and hydrogen peroxide water, and a small amount of hydrofluoric acid (HF) of approximately 5 to 12 ppm preferably. An automated system mixes the sulfuric acid, hydrogen peroxide water, and HF, and generates washing liquid having target HF concentration within a preferable range such as 8 ppm. After that, the system maintains HF concentration within a range of approximately 0.5 to 1 ppm from at least target HF concentration.

公开(公告)号：JP2002222786A

公开(公告)日：2002-08-09

申请号：JP2001388283

申请日：2001-12-20

Applicant: IBM

Inventor： JOHN MICHAEL COTT ,  DELEHANTY DONALD J ,  MCCULLOUGH KENNETH JOHN ,  MOREAU WAYNE MARTIN ,  SIMONS JOHN P ,  TAFT CHARLES J ,  VOLANT RICHARD P

IPC: H01L21/304 ,  B08B7/00 ,  C11D1/00 ,  C11D3/20 ,  C11D3/43 ,  C23G5/00 ,  H01L21/3105 ,  H01L21/321

Abstract: PROBLEM TO BE SOLVED: To provide a process for removing residual slurry which is generated by chemical mechanical polishing of a workpiece. SOLUTION: This process includes a step for removing the residual slurry resulting from the chemical mechanical polishing which uses composition containing mixture of supercritical fluid, which contains carbon dioxide, co- solvent and a surfactant. It is considered that the supercritical fluid must satisfy two conditions. Firstly, residual slurry removing fluid whose surface tension is sufficiently low must be used, in order to permeate as far as very narrow apertures. Secondly, the fluid must be able to neutralize electric charges applied to slurry particles, in order not only to permeate as far as the narrow apertures but also to remove the residual slurry particles.