公开(公告)号：JP2001102582A

公开(公告)日：2001-04-13

申请号：JP2000254167

申请日：2000-08-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERNHARD LUSTIG ,  SCHAEFER HERBERT ,  RISCH LOTHAR DR

IPC: H01L29/78 ,  H01L21/335 ,  H01L21/74 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/10

Abstract: PROBLEM TO BE SOLVED: To provide a MOS transistor, where its CMOS-gate transit time is shortened as a short-channel type MOS transistor and its rising current is made rapid. SOLUTION: The manufacturing method of a MOS transistor comprises a step for providing in a semiconductor substrate a well having a dopant of a first conductive type, a step for providing an epitaxial layer on the surface of the doped well, a step for implanting into the epitaxial layer a dopant having a concentration lower than 1017/cm3, a step for providing in the epitaxial layer source/drain regions, having dopants of a second opposite conduction type to the first conduction type and a channel region, and a step for making the depths of the source/drain regions which is not larger than the thickness of the epitaxial layer.