公开(公告)号：JP2000196088A

公开(公告)日：2000-07-14

申请号：JP37063799

申请日：1999-12-27

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： SENTIRU SURINIVASAN ,  WEYBRIGHT MARY ,  GAMBINO JEFFREY ,  THOMAS RUPP

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/283 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To protect oxidizable material which forms a gate from oxidation by a method wherein an anti-oxidant layer is formed on the gate of a transistor, and the gate with an anti-oxidant layer is exposed to an oxidizing atmosphere to form the source and drain of the transistor. SOLUTION: A gate insulating layer 11 and a gate metal coating layer 13 are laminated on a semiconductor substrate 10, where the coating layer 13 is composed of a doped silicon layer 14 and a tungsten silicide layer 16 deposited on the silicon layer 14. A silicon nitride layer 18 is deposited on the silicide layer 16, and a mask 30 with an opening 31 is provided on the silicon nitride layer 18 and the gate metal coating layer 13. Thereafter, a gate G of a transistor is formed in a region masked with the mask 30 by plasma etching, An anti-oxidant layer 32 is formed on the side walls of the gate G, the silicon nitride layer 18, and the doped silicon layer 14, and the gate G is exposed to an oxidizing atmosphere for the formation of a source region S and a drain region D.