公开(公告)号：US11223013B2

公开(公告)日：2022-01-11

申请号：US16489266

申请日：2017-02-28

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Qi Liu ,  Xiaolong Zhao ,  Sen Liu ,  Ming Liu ,  Hangbing Lv ,  Shibing Long ,  Yan Wang ,  Facai Wu

IPC: H01L45/00

Abstract: The present disclosure provides a conductive bridge semiconductor device and a method of manufacturing the same. The conductive bridge semiconductor device includes a lower electrode, a resistive switching functional layer, an ion barrier layer and an active upper electrode from bottom to top, wherein the ion barrier layer is provided with certain holes through which active conductive ions pass. Based on this structure, the precise designing of the holes on the barrier layer facilitates the modulation of the quantity, size and density of the conduction paths in the conductive bridge semiconductor device, which enables that the conductive bridge semiconductor device can be modulated to be a nonvolatile conductive bridge resistive random access memory or a volatile conductive bridge selector. Based on the above method, ultra-low power nonvolatile conductive bridge memory and high driving-current volatile conductive bridge selector with controllable polarity are completed.

公开(公告)号：US09508776B2

公开(公告)日：2016-11-29

申请号：US14771145

申请日：2013-09-24

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Qi Liu ,  Ming Liu ,  Shibing Long ,  Hangbing Lv ,  Yan Wang

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

CPC classification number: H01L27/2463 ,  G11C13/0007 ,  G11C13/0023 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2013/0073 ,  G11C2213/15 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/08 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/148

Abstract: A gating device cell for a cross array of bipolar resistive memory cells comprises an n-p diode and a p-n diode, wherein the n-p diode and the p-n diode have opposite polarities and are connected in parallel, such that the gating device cell exhibits a bidirectional rectification feature. The gating device cell exhibits the bidirectional rectification feature, that is, it can provide a relatively high current density at any voltage polarity in its ON state, and also a relatively great rectification ratio (Rv/2/RV) under a read voltage. Therefore, it is possible to suppress read crosstalk in the cross array of bipolar resistive memory cells to avoid misreading, thereby solving the problem that a conventional rectifier diode is only applicable to a cross array of unipolar resistive memory cells.

Abstract translation: 用于双极性电阻式存储单元的交叉阵列的门控器件单元包括np二极管和pn二极管，其中np二极管和pn二极管具有相反的极性并且并联连接，使得门控器件单元呈现双向整流特征 。 选通装置单元具有双向整流特征，即，其可以在其导通状态下的任何电压极性下提供相对高的电流密度，并且在读取电压下可以提供相对较大的整流比（Rv / 2 / RV）。 因此，可以抑制双极电阻存储单元的交叉阵列中的读串扰，以避免误读，从而解决了传统的整流二极管仅可应用于单极性电阻存储单元的交叉阵列的问题。