Abstract:
A memory device may (44, 46) determine its device ID in response to the order of a received training pattern. The training pattern may be transmitted over swizzled signal lines to multiple memory devices (44, 46) arranged in a logical stack. Each memory device may be packaged on a substrate (48, 50) having the swizzled signal lines. The memory devices may be physically stacked or planar. Other embodiments are described and claimed.
Abstract:
Methods and apparatus for use with memory systems and memory modules are included among the embodiments. In exemplary systems, error-correction coding (ECC) data is temporally multiplexed with user data on the same data bus lines in a burst mode transfer, such that separate chips and data lines are not required to support ECC. The memory devices on the modules each contain additional indirectly addressable ECC segments associated with addressable segments of the device. The temporally multiplexed ECC data is read from and written to the indirectly addressable segment associated with the addressable data transmitted in the burst mode transfer. In some embodiments, two types of burst modes are supported, one which includes ECC data and one which does not.This allows one type of memory module to support both ECC and non-ECC systems, and in some cases to use ECC for some data and not for other data in the same system. Other embodiments are described and claimed.
Abstract:
A memory agent schedules local and pass-through responses according to an identifier for each response. A response file may be large enough to store responses for a maximum number of requests that may be outstanding on a memory channel. A request file may be large enough to store requests for a maximum number of requests that may be outstanding on the memory channel. The identifier for each request and/or response may be received on the same channel link as the request and/or response. Other embodiments are described and claimed.
Abstract:
Memory apparatus and methods utilizing multiple bit lanes may redirect one or more signals on the bit lanes. A memory agent may include a redrive circuit having a plurality of bit lanes, a memory device or interface, and a fail-over circuit coupled between the plurality of bit lanes and the memory device or interface.
Abstract:
Method and apparatus for use with buffered memory modules are included among the embodiments. In exemplary systems, the memory module has a buffer that receives memory commands and data, and then presents those commands and data to physical memory devices through a separate interface. The buffer has the capability to accept an implicit memory command, i.e., a command that does not contain a fully-formed memory device command, but instead instructs the memory module buffer to form one or more fully-formed memory device commands to perform memory operations. Substantial memory channel bandwidth can be saved, for instance, with a command that instructs a memory module to clear a region of memory or copy a region to a second area in memory. Other embodiments are described and claimed.
Abstract:
Memory apparatus and methods transmit and receive a CRC code for a first portion of a frame before the second portion of the frame is finished being transferred. The CRC may be used to check the first portion of the frame before the second portion of the frame is completely received. A command or other information in the first portion of the frame may be used without waiting for the rest of the frame. Other embodiments are described and claimed.
Abstract:
Memory apparatus and methods selectively map first lanes to second lanes. A memory agent may transfer training and return sequences using different lane mappings. The return sequences may be analyzed to identify failed lanes. Other embodiments are described and claimed.
Abstract:
An apparatus includes a source for a command and an associated data. An error code generator generates an error code for the combined command and associated data, which is distributed among the command and the associated data. A transmitter then transmits the command and the associated data separately.
Abstract:
In some embodiments an apparatus may comprise a semiconductor die, an elastomer layer attached to the die, a tape lead attached to the elastomer, a portion of the tape lead exposed through the elastomer to connect with the die, a polymer resin attached to the tape lead, and a thermally conductive substrate attached to the polymer resin such that the thermally conductive substrate can spread heat from the semiconductor die.
Abstract:
Memory apparatus and methods accumulate data between a data path and a memory device. A memory agent may have a data accumulator between a redrive circuit and a memory device or interface. The data accumulator may accumulate data to or from the redrive circuit. Other embodiments are described and claimed.