Abstract:
In some embodiments, a collection system of a semiconductor metrology tool includes a chuck to support a target from which an optical beam is reflected and an aperture mask to provide an adjustable aperture for the reflected optical beam. The aperture mask includes a plurality of opaque plates with adjustable positions. The collection system also includes a spectrometer to receive the reflected optical beam. The aperture mask is situated between the chuck and the spectrometer along the optical axis.
Abstract:
The present invention includes an illumination source, at least one illumination symmetrization module (ISM) configured to symmetrize at least a portion of light emanating from the illumination source, a first beam splitter configured to direct a first portion of light processed by the ISM along an object path to a surface of one or more specimens and a second portion of light processed by the ISM along a reference path, and a detector disposed along a primary optical axis, wherein the detector is configured to collect a portion of light reflected from the surface of the one or more specimens.
Abstract:
The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.
Abstract:
An overlay metrology system includes an overlay metrology tool configurable to generate overlay signals with a plurality of recipes and further directs an illumination beam to an overlay target and collects radiation emanating from the overlay target in response to the at least a portion of the illumination beam to generate the overlay signal with the particular recipe. The overlay metrology system further acquires two or more overlay signals for a first overlay target using two or more unique recipes, subsequently acquires two or more overlay signals for a second overlay target using the two or more unique recipes, determines candidate overlays for the first and second overlay targets based on the two or more overlay signals for each target, and determines output overlays for the first and second overlay targets based on the two or more candidate overlays for each target.
Abstract:
A spectroscopic beam profile metrology system simultaneously detects measurement signals over a large wavelength range and a large range of angles of incidence (AOI). In one aspect, a multiple wavelength illumination beam is reshaped to a narrow line shaped beam of light that is projected onto an overlay metrology target such that the direction of the line shaped beam is aligned with the direction of extent of a grating structure of the overlay metrology target. Collected light is dispersed across a detector according to AOI in one direction and according to wavelength in another direction. The measured signal at each detector pixel is associated with a particular AOI and wavelength. The collected light includes first order diffracted light, zero order diffracted light, or a combination thereof. In some embodiments, first order diffracted light and zero order diffracted light are detected over separate areas of the detector.
Abstract:
In one embodiment, apparatus and methods for determining a parameter of a target are disclosed. A target having an imaging structure and a scatterometry structure is provided. An image of the imaging structure is obtained with an imaging channel of a metrology tool. A scatterometry signal is also obtained from the scatterometry structure with a scatterometry channel of the metrology tool. At least one parameter, such as overlay error, of the target is determined based on both the image and the scatterometry signal.
Abstract:
An optical system may include an objective, a source of illumination, an illumination system having illumination optics configured to direct the illumination onto the objective, and at least two dynamic optical array devices located at a pupil conjugate plane and a field conjugate plane, respectively in the illumination optics. The dynamic optical array devices are configured to control one or more properties of illumination coupled from the illumination system to the objective.
Abstract:
Metrology systems and methods are provided herein, which comprise an optical element that is positioned between an objective lens of the system and a target. The optical element is arranged to enhance evanescent modes of radiation reflected by the target. Various configurations are disclosed, the optical element may comprise a solid immersion lens, a combination of Moiré-elements and solid immersion optics, dielectric-metal-dielectric stacks of different designs, and resonating elements to amplify the evanescent modes of illuminating radiation. The metrology systems and methods are configurable to various metrology types, including imaging and scatterometry methods.
Abstract:
Contrast enhancement in a metrology tool may include generating a beam of illumination, directing a portion of the generated beam onto a surface of a spatial light modulator (SLM), directing at least a portion of the generated beam incident on the surface of the SLM through an aperture of an aperture stop and onto one or more target structures of one or more samples, and generating a selected illumination pupil function of the illumination transmitted through the aperture utilizing the SLM in order to establish a contrast level of one or more field images of the one or more target structures above a selected contrast threshold, and performing one or more metrology measurements on the one or more target structures utilizing the selected illumination pupil function.
Abstract:
Metrology systems and methods are provided herein, which comprise an optical element that is positioned between an objective lens of the system and a target. The optical element is arranged to enhance evanescent modes of radiation reflected by the target. Various configurations are disclosed: the optical element may comprise a solid immersion lens, a combination of Moiré-elements and solid immersion optics, dielectric-metal-dielectric stacks of different designs, and resonating elements to amplify the evanescent modes of illuminating radiation. The metrology systems and methods are configurable to various metrology types, including imaging and scatterometry methods.