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    METROLOGY USING OVERLAY AND YIELD CRITICAL PATTERNS
    1.
    发明申请
    METROLOGY USING OVERLAY AND YIELD CRITICAL PATTERNS 审中-公开
    使用覆盖和关键模式的计量学

    公开(公告)号：WO2016010776A1

    公开(公告)日：2016-01-21

    申请号：PCT/US2015/039437

    申请日：2015-07-07

    Applicant: KLA-TENCOR CORPORATION

    Inventor： KANDEL, Daniel ,  SMITH, Mark. D ,  WAGNER, Mark ,  AMIT, Eran ,  LEE, Myungjun

    IPC: H01L21/66

    CPC classification number: G06F17/5081 ,  G01N21/93 ,  G01N21/956 ,  G01N2201/13 ,  G06F2217/12 ,  H01L22/12 ,  H01L22/30 ,  Y02P80/30

    Abstract: Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.

    Abstract translation: 提供了测量方法，其包括在设备设计中识别重叠关键模式，所述重叠关键模式对于依赖于设计规范的指定阈值以上的过程变化具有重叠灵敏度; 并使用与所识别的重叠关键模式相对应的度量目标。 或者或补充地，计量方法包括根据由于指定的过程变化而变窄的对应过程窗口来识别产量关键模式，其中，所述变窄由所述模式的边缘放置误差（EPE）对过程参数的依赖性来定义。 提供相应的目标和测量。

    DEVICE-LIKE SCATTEROMETRY OVERLAY TARGETS
    2.
    发明申请
    DEVICE-LIKE SCATTEROMETRY OVERLAY TARGETS 审中-公开
    设备类似的重叠目标

    公开(公告)号：WO2014004669A1

    公开(公告)日：2014-01-03

    申请号：PCT/US2013/047887

    申请日：2013-06-26

    Applicant: KLA-TENCOR CORPORATION

    Inventor： LEVINSKI, Vladimir ,  KANDEL, Daniel ,  AMIT, Eran

    IPC: H01L21/66

    CPC classification number: G01B11/272 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In one embodiment, a semiconductor target for detecting overlay error between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of a plurality of first grating structures having a course pitch that is resolvable by an inspection tool and a plurality of second grating structures positioned relative to the first grating structures. The second grating structures have a fine pitch that is smaller than the course pitch, and the first and second grating structures are both formed in two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate. The first and second gratings have feature dimensions that all comply with a predefined design rules specification.

    Abstract translation: 在一个实施例中，公开了一种半导体靶，用于检测衬底的两个或更多个连续层之间或在衬底的单个层上的两个或更多个分开产生的图案之间的重叠误差。 目标包括至少多个多个第一光栅结构，其具有通过检查工具可分辨的光程间距和相对于第一光栅结构定位的多个第二光栅结构。 第二光栅结构具有小于光栅间距的细间距，并且第一和第二光栅结构均形成在衬底的两个或更多个连续层中，或者在衬底的单个层上的两个或更多个分开产生的图案之间 。 第一和第二光栅具有全部符合预定义的设计规则规范的特征尺寸。

    METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES USING AN OPTIMZED SAMPLING SCHEME WITH SMART INTERPOLATION
    3.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES USING AN OPTIMZED SAMPLING SCHEME WITH SMART INTERPOLATION 审中-公开
    使用优化采样方案与智能插值提供过程工具可修正性的方法和系统

    公开(公告)号：WO2011103048A2

    公开(公告)日：2011-08-25

    申请号：PCT/US2011/024689

    申请日：2011-02-14

    Applicant: KLA-TENCOR CORPORATION ,  IZIKSON, Pavel ,  KANDEL, Daniel ,  ROBINSON, John

    Inventor： IZIKSON, Pavel ,  KANDEL, Daniel ,  ROBINSON, John

    IPC: H01L21/66 ,  H01L21/027

    CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present invention may include performing a first measurement on a wafer of a first lot of wafers via an omniscient sampling process, calculating a first set of process tool correctables utilizing one or more results of the measurement performed via an omniscient sampling process, randomly selecting a set of field sampling locations of the wafer of a first lot of wafers, calculating a second set of process tool correctables by applying an interpolation process to the randomly selected set of field sampling locations, wherein the interpolation process utilizes values from the first set of process tool correctables for the randomly selected set of field sampling locations in order to calculate correctables for fields of the wafer of the first lot not included in the set of randomly selected fields, and determining a sub-sampling scheme by comparing the first set of process tool correctables to the second set of correctables.

    Abstract translation: 本发明可以包括通过无所不在的采样处理在第一批晶片的晶片上进行第一测量，利用通过全方位采样过程执行的一个或多个测量结果来计算第一组处理工具校正值，随机选择 第一批晶片的晶片的一组场采样位置，通过对随机选择的一组场采样位置应用内插处理来计算第二组处理工具可校正值，其中所述内插处理利用来自第一组处理的值 用于随机选择的一组场采样位置的工具可校正，以便计算不包括在随机选择的场的集合中的第一批的晶片的场的可校正性，以及通过比较第一组处理工具来确定子采样方案 可纠正到第二组可纠正的。

    OPTICAL GAIN APPROACH FOR ENHANCEMENT OF OVERLAY AND ALIGNMENT SYSTEMS PERFORMANCE
    5.
    发明申请
    OPTICAL GAIN APPROACH FOR ENHANCEMENT OF OVERLAY AND ALIGNMENT SYSTEMS PERFORMANCE 审中-公开
    增强覆盖和对准系统性能的光学增益方法

    公开(公告)号：WO2008134378A1

    公开(公告)日：2008-11-06

    申请号：PCT/US2008/061318

    申请日：2008-04-23

    Applicant: KLA-TENCOR CORPORATION ,  KANDEL, Daniel ,  LEVINSKI, Vladimir ,  ADEL, Michael ,  SELIGSON, Joel

    Inventor： KANDEL, Daniel ,  LEVINSKI, Vladimir ,  ADEL, Michael ,  SELIGSON, Joel

    IPC: G01N21/00

    CPC classification number: G01B11/272 ,  G03F7/70633

    Abstract: A resultant image of a grating target may be obtained by dividing an image of the target into first and second portions and optically modifying the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern. The resultant image may be analyzed to determine a shift in the grating target from a shift in the Moiré pattern. Optical alignment apparatus may include a first beam splitter, an image transformation element optically coupled to the first beam splitter, and a second beam splitter. The first beam splitter divides an image of a grating target into first and second portions. The second beam splitter combines the first portion and the second portion. The image transformation element optically modifies the first and/or second portion such that a final image formed from their combination is characterized by a Moiré pattern.

    Abstract translation: 可以通过将目标图像划分成第一和第二部分并光学地修改第一和/或第二部分使得由其组合形成的最终图像由莫尔图案表征来获得光栅目标的合成图像。 可以分析所得到的图像以确定光栅目标从莫尔图案的偏移中的偏移。 光学对准装置可以包括第一分束器，光耦合到第一分束器的图像变换元件和第二分束器。 第一分束器将光栅靶的图像分成第一和第二部分。 第二分束器组合第一部分和第二部分。 图像变换元件光学地修改第一和/或第二部分，使得由它们的组合形成的最终图像的特征在于莫尔图案。

    SELF-MOIRÉ TARGET DESIGN PRINCIPLES FOR MEASURING UNRESOLVED DEVICE-LIKE PITCHES
    6.
    发明申请
    SELF-MOIRÉ TARGET DESIGN PRINCIPLES FOR MEASURING UNRESOLVED DEVICE-LIKE PITCHES 审中-公开
    用于测量非对称设备的脚踏板的自我设计目标设计原理

    公开(公告)号：WO2016187453A1

    公开(公告)日：2016-11-24

    申请号：PCT/US2016/033323

    申请日：2016-05-19

    Applicant: KLA-TENCOR CORPORATION

    Inventor： LEVINSKI, Vladimir ,  PASKOVER, Yuri ,  KANDEL, Daniel

    IPC: G01B11/25 ,  G01B11/02

    CPC classification number: G02B27/60 ,  G01B11/02 ,  G01B11/25 ,  G03F7/70616

    Abstract: Metrology targets and methods are provided, which provide self-Moiré measurements of unresolved target features, i.e., interaction of electromagnetic fields re-scattered off elements within a single target layer provides signals with Moiré pitches that are measurable, although the actual target pitches are unresolved and possibly device-like. Targets comprise cell(s) with interlaced lines of elements having different device-like pitches which are selected to yield resolved Moiré pitch(es). Different target designs are presented for scatterometry and imaging metrology measurements, as well as for critical dimension, dose and focus, and pitch walk measurements - of device-like targets.

    Abstract translation: 提供了计量目标和方法，其提供了未被解决的目标特征的自我莫尔测量，即，单个目标层内的元件重新分散的电磁场的相互作用提供了可测量的莫尔间距的信号，尽管实际的目标音高尚未解决 并可能是类似设备的。 目标包括具有不同设备状间距的具有隔行线的元件的单元，其被选择以产生分辨莫尔边距。 提供了不同的目标设计，用于散射测量和成像测量测量，以及关键尺寸，剂量和焦距以及俯仰测量 - 设备类目标。

    REFLECTION SYMMETRIC SCATTEROMETRY OVERLAY TARGETS AND METHODS
    7.
    发明申请
    REFLECTION SYMMETRIC SCATTEROMETRY OVERLAY TARGETS AND METHODS 审中-公开
    反射对称散射目标和方法

    公开(公告)号：WO2015013621A1

    公开(公告)日：2015-01-29

    申请号：PCT/US2014/048203

    申请日：2014-07-25

    Applicant: KLA-TENCOR CORPORATION

    Inventor： BRINGOLTZ, Barak ,  KANDEL, Daniel

    IPC: G01B11/00 ,  G01B11/24 ,  G03F7/00 ,  G03F7/20 ,  G03F1/00 ,  H01L21/66

    CPC classification number: G01B11/272 ,  G03F7/70633

    Abstract: Scatterometry targets, measurement and calibration methods as well as metrology systems are provided, which exhibit reflection symmetry instead of prior art rotational symmetry. Targets are designed to be reflection symmetric with respect to one, two or more reflection planes, and respective measurement methods and tool calibration methods are introduced. The disclosure removes inaccuracies involved in present targets and measurement procedures that result from using rotationally symmetric targets and calibrations, and new types of targets and scatterometry information sources are presented.

    Abstract translation: 提供散射测量目标，测量和校准方法以及测量系统，其显示反射对称性而不是现有技术的旋转对称性。 目标被设计为相对于一个，两个或更多个反射平面反射对称，并且引入各自的测量方法和工具校准方法。 本公开消除了由于使用旋转对称目标和校准而导致的目标和测量过程所涉及的不准确，并提出了新类型的目标和散射测量信息源。

    APODIZATION FOR PUPIL IMAGING SCATTEROMETRY
    8.
    发明申请
    APODIZATION FOR PUPIL IMAGING SCATTEROMETRY 审中-公开
    用于PUPIL成像分析的APODIZATION

    公开(公告)号：WO2014085338A1

    公开(公告)日：2014-06-05

    申请号：PCT/US2013/071715

    申请日：2013-11-25

    Applicant: KLA-TENCOR CORPORATION

    Inventor： HILL, Andrew W. ,  MANASSEN, Amnon ,  BRINGOLTZ, Barak ,  BACHAR, Ohad ,  GHINOVKER, Mark ,  BOMZON, Zeev ,  KANDEL, Daniel

    IPC: G01N21/47 ,  H01L21/66

    CPC classification number: G02B27/58 ,  G01B11/00 ,  G01N21/47 ,  G01N21/55 ,  G01N2201/06113 ,  G01N2201/068 ,  G03F7/70625 ,  G03F7/70633

    Abstract: The disclosure is directed to various apodization schemes for pupil imaging scatterometry. In some embodiments, the system includes an apodizer disposed within a pupil plane of the illumination path. In some embodiments, the system further includes an illumination scanner configured to scan a surface of the sample with at least a portion of apodized illumination. In some embodiments, the system includes an apodized pupil configured to provide a quadrupole illumination function. In some embodiments, the system further includes an apodized collection field stop. The various embodiments described herein may be combined to achieve certain advantages.

    Abstract translation: 本公开涉及用于瞳孔成像散射测量的各种变迹方案。 在一些实施例中，该系统包括设置在照明路径的光瞳平面内的变迹器。 在一些实施例中，系统还包括照明扫描器，其构造成用至少一部分变迹照明来扫描样品的表面。 在一些实施例中，系统包括配置成提供四极照明功能的变迹瞳孔。 在一些实施例中，系统还包括变迹集合区域停止。 可以组合这里描述的各种实施例以实现某些优点。

    ANGLE-RESOLVED ANTISYMMETRIC SCATTEROMETRY
    10.
    发明申请
    ANGLE-RESOLVED ANTISYMMETRIC SCATTEROMETRY 审中-公开
    角解决的反对称散射测量

    公开(公告)号：WO2011011511A1

    公开(公告)日：2011-01-27

    申请号：PCT/US2010/042738

    申请日：2010-07-21

    Applicant: KLA-TENCOR CORPORATION ,  KANDEL, Daniel ,  LEVINSKI, Vladimir ,  SAPIENS, Noam

    Inventor： KANDEL, Daniel ,  LEVINSKI, Vladimir ,  SAPIENS, Noam

    IPC: G01J4/00

    CPC classification number: G01N21/95607 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/56 ,  G03F7/70633

    Abstract: A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS 1 ) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (ΔS 2 ) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (ΔS 1 ) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (ΔS 2 ) associated with the second scatterometry cell.

    Abstract translation: 用于确定覆盖偏移的方法可以包括但不限于：获得与第一散射测量单元相关联的第一反对称差分信号（ΔS1）; 获得与第二散射测量单元相关联的第二反对称差分信号（θS2），并计算与第一散射测量单元和第二反对称差分信号相关联的第一反对称差分（ΔS1）信号的叠加偏移（ βS2）与第二散射测量单元相关联。

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