公开(公告)号：KR100875840B1

公开(公告)日：2008-12-26

申请号：KR20070077149

申请日：2007-07-31

Applicant: KOREA ELECTRONICS TECHNOLOGY

Inventor： LEE KYOUNG IL ,  CHO JIN WOO

IPC: G02F1/13

CPC classification number: G02F1/1309 ,  G01R1/073 ,  G02F1/136259 ,  G09G3/006

Abstract: An array guide for a probe pin for testing an LCD panel and a method for manufacturing the same are provided to inspect a pixel fault precisely corresponds to the probe pin with the pixel of the LCD panel. A pad(100) is plated with a conductive film(110) at one side, and formed in the nonconducting substance. A lower slit(200) coats the parylene in order to reduce impact with the probe pin and forms the protective film. A supporter(300) of the nonconducting substance is positioned in one side of the top side of the low slit without the interference with etching hole. An upper slit(400) is formed on the supporter and arranged along the etching hole of the lower slit. The upper slit includes a protective layer by coating parylene to reduce the impact with the probe pin.

Abstract translation: 提供了用于测试LCD面板的探针的阵列引导件及其制造方法，用于检查与LCD面板的像素精确地对应于探针的像素故障。 衬垫（100）在一侧镀有导电膜（110），并形成在不导电物质中。 下切口（200）涂覆聚对二甲苯以减少与探针的冲击并形成保护膜。 不导电物质的支撑体（300）位于低缝的顶侧的一侧，而不会与蚀刻孔干涉。 上部狭缝（400）形成在支撑体上并且沿着下狭缝的蚀刻孔布置。 上缝隙通过涂覆聚对二甲苯以减少与探针的冲击而包括保护层。

公开(公告)号：KR100771851B1

公开(公告)日：2007-10-31

申请号：KR20060068546

申请日：2006-07-21

Applicant: KOREA ELECTRONICS TECHNOLOGY

Inventor： SUH MOON SUHK ,  SHIN JIN KOOG ,  LEE CHURL SEUNG ,  LEE KYOUNG IL

IPC: G01Q60/30 ,  G01Q60/38

CPC classification number: G01Q60/30 ,  G01Q60/38

Abstract: A manufacturing method of an AFM(Atomic Force Microscopy) cantilever having a FET(Field Effect Transistor) is provided to easily perform simulation for manufacturing the AFM cantilever having the FET by finely controlling length of an effective channel, and to improve yield of a manufacturing process by using low cost photolithography equipment. A manufacturing method of an AFM cantilever having a FET comprises the steps of forming multilayer insulating film in an upper part of a substrate formed sequentially in an order of a first semiconductor substrate, interlayer insulating film and a second semiconductor substrate, sequentially etching the multilayer insulating film, injecting ions having different type from the second semiconductor substrate and forming a source/drain and a channel, etching the second semiconductor substrate and forming a probe(220) and a probe portion(210), forming the insulating film in a region except the probe and the probe portion, and forming a metal electrode in an upper part of a region of the source/drain and the channel, sequentially etching the multilayer insulating film, the second semiconductor substrate, the insulating film and the first semiconductor substrate, and forming a cantilever portion(230), and etching a rear surface of the first semiconductor substrate and forming a handling portion(240).

Abstract translation: 提供具有FET（场效应晶体管）的AFM（原子力显微镜）悬臂的制造方法，以通过精细地控制有效通道的长度来容易地进行用于制造具有FET的AFM悬臂的模拟，并且提高制造的产量 通过使用低成本光刻设备进行处理。 具有FET的AFM悬臂的制造方法包括以下步骤：在第一半导体衬底，层间绝缘膜和第二半导体衬底的顺序依次形成的衬底的上部中形成多层绝缘膜，依次蚀刻多层绝缘体 从所述第二半导体衬底注入具有不同类型的离子并形成源极/漏极和沟道，蚀刻所述第二半导体衬底并形成探针（220）和探针部分（210），所述绝缘膜在除了 探针和探针部分，并且在源极/漏极和沟道的区域的上部形成金属电极，依次蚀刻多层绝缘膜，第二半导体衬底，绝缘膜和第一半导体衬底，以及 形成悬臂部分（230），并蚀刻第一半导体衬底的后表面并形成处理口 离子（240）。

公开(公告)号：KR20180072091A

公开(公告)日：2018-06-29

申请号：KR20160175300

申请日：2016-12-21

Applicant: KOREA ELECTRONICS TECHNOLOGY

Inventor： SEO YONG GON ,  SHIN JIN KOOG ,  LEE KYOUNG IL

IPC: B41J3/54 ,  B41J2/01 ,  B41J2/45

Abstract: 인쇄품질을향상시킬수 있는잉크젯헤드모듈이제안된다. 본발명에따른잉크젯헤드모듈은잉크젯헤드모듈은노즐; 및노즐로부터토출된잉크에광조사하는광조사부;를포함한다.