근적외선 차폐 기능을 갖는 복합 광학 필름
    1.
    发明公开
    근적외선 차폐 기능을 갖는 복합 광학 필름 审中-公开
    具有近红外屏蔽功能的复杂光学膜

    公开(公告)号:KR20150061620A

    公开(公告)日:2015-06-04

    申请号:KR20150065204

    申请日:2015-05-11

    Abstract: 근적외선차폐기능을갖는복합광학필름이개시된다. 본발명의일 실시예에따른복합광학필름은투명기판의일면또는양면에근적외선반사층및 투명전도성층이적층되어형성되거나, 투명기판의일면에근적외선반사층이형성되고타면에투명전도성층이형성되는복합광학필름이고, 근적외선반사층은제1 굴절율을갖는제1 굴절층과, 제1 굴절율보다낮은제2 굴절율을갖는제2 굴절층이교대로적층하여형성되는것으로, 근적외선반사층의적층수는홀수이다.

    Abstract translation: 公开了具有近红外屏蔽功能的复合光学膜。 根据本发明实施例的复合光学膜通过在透明基板的一个表面或两个表面上层叠近红外反射层和透明导电层而形成,或者通过在一个表面上形成近红外反射层 的透明基板和另一个表面上的透明导电层。 近红外反射层包括具有第一折射率的第一折射层和具有低于或等于第一折射率的第二折射率的第二折射层。 第一折射层和第二折射层交替层叠。 层叠的近红外层的数量是不均匀的数量。

    AFM CANTILEVER HAVING FET AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明授权
    AFM CANTILEVER HAVING FET AND METHOD FOR MANUFACTURING THE SAME 无效
    具有FET的AFM插座及其制造方法

    公开(公告)号:KR100771851B1

    公开(公告)日:2007-10-31

    申请号:KR20060068546

    申请日:2006-07-21

    CPC classification number: G01Q60/30 G01Q60/38

    Abstract: A manufacturing method of an AFM(Atomic Force Microscopy) cantilever having a FET(Field Effect Transistor) is provided to easily perform simulation for manufacturing the AFM cantilever having the FET by finely controlling length of an effective channel, and to improve yield of a manufacturing process by using low cost photolithography equipment. A manufacturing method of an AFM cantilever having a FET comprises the steps of forming multilayer insulating film in an upper part of a substrate formed sequentially in an order of a first semiconductor substrate, interlayer insulating film and a second semiconductor substrate, sequentially etching the multilayer insulating film, injecting ions having different type from the second semiconductor substrate and forming a source/drain and a channel, etching the second semiconductor substrate and forming a probe(220) and a probe portion(210), forming the insulating film in a region except the probe and the probe portion, and forming a metal electrode in an upper part of a region of the source/drain and the channel, sequentially etching the multilayer insulating film, the second semiconductor substrate, the insulating film and the first semiconductor substrate, and forming a cantilever portion(230), and etching a rear surface of the first semiconductor substrate and forming a handling portion(240).

    Abstract translation: 提供具有FET(场效应晶体管)的AFM(原子力显微镜)悬臂的制造方法,以通过精细地控制有效通道的长度来容易地进行用于制造具有FET的AFM悬臂的模拟,并且提高制造的产量 通过使用低成本光刻设备进行处理。 具有FET的AFM悬臂的制造方法包括以下步骤:在第一半导体衬底,层间绝缘膜和第二半导体衬底的顺序依次形成的衬底的上部中形成多层绝缘膜,依次蚀刻多层绝缘体 从所述第二半导体衬底注入具有不同类型的离子并形成源极/漏极和沟道,蚀刻所述第二半导体衬底并形成探针(220)和探针部分(210),所述绝缘膜在除了 探针和探针部分,并且在源极/漏极和沟道的区域的上部形成金属电极,依次蚀刻多层绝缘膜,第二半导体衬底,绝缘膜和第一半导体衬底,以及 形成悬臂部分(230),并蚀刻第一半导体衬底的后表面并形成处理口 离子(240)。

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